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power diode. BYR16W-1200 Datasheet

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power diode. BYR16W-1200 Datasheet
















BYR16W-1200 diode. Datasheet pdf. Equivalent













Part

BYR16W-1200

Description

Ultrafast power diode



Feature


BYR16W-1200 Ultrafast power diode 26 Sep tember 2018 Product data sheet 1. Gen eral description Ultrafast power diode in a SOD142 (2-lead TO247) plastic pack age. 2. Features and benefits • Fast switching • Low forward voltage drop • Low thermal resistance • Soft re covery characteristic • Reduces switc hing losses in associated MOSFET or IGB T • Planar passivated for vo.
Manufacture

WeEn

Datasheet
Download BYR16W-1200 Datasheet


WeEn BYR16W-1200

BYR16W-1200; ltage ruggedness and reliability 3. App lications • Switched-Mode Power Suppl ies • Power factor correction diode Uninterrupted Power Supply • Motor drive and SMPS freewheeling diode 4. Quick reference data Table 1. Quick re ference data Symbol Parameter VR IF( AV) reverse voltage average forward cu rrent IFSM non-repetitive peak forwa rd current Static charact.


WeEn BYR16W-1200

eristics VF forward voltage Dynamic c haracteristics trr reverse recovery t ime Conditions DC δ = 0.5 ; Tmb ≤ 9 8 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; Tj(init) = 25 °C ; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse IF = 16 A; Tj = 25 °C; Fig. 6 IF = 32 A; T j = 25 °C; Fig. 6 IF = 16 A; Tj = 125 °C; Fig. 6 IF = 1 A; VR = .


WeEn BYR16W-1200

30 V; dIF/dt = 200 A/µs; Tj = 25 °C; F ig. 7 Min Typ Max Unit - - 1200 V - - 16 A - - 150 A - - 165 A - 2.3 3 V - 2.8 3.9 V - 1.8 2.7 V - 40 - ns WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description S implified outline 1 K cathode 2 A anode mb mb mounting base; connecte d to cathode BYR16.





Part

BYR16W-1200

Description

Ultrafast power diode



Feature


BYR16W-1200 Ultrafast power diode 26 Sep tember 2018 Product data sheet 1. Gen eral description Ultrafast power diode in a SOD142 (2-lead TO247) plastic pack age. 2. Features and benefits • Fast switching • Low forward voltage drop • Low thermal resistance • Soft re covery characteristic • Reduces switc hing losses in associated MOSFET or IGB T • Planar passivated for vo.
Manufacture

WeEn

Datasheet
Download BYR16W-1200 Datasheet




 BYR16W-1200
BYR16W-1200
Ultrafast power diode
26 September 2018
Product data sheet
1. General description
Ultrafast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
Fast switching
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
Reduces switching losses in associated MOSFET or IGBT
Planar passivated for voltage ruggedness and reliability
3. Applications
Switched-Mode Power Supplies
Power factor correction diode
Uninterrupted Power Supply
Motor drive and SMPS freewheeling diode
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VR
IF(AV)
reverse voltage
average forward
current
IFSM
non-repetitive peak
forward current
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Conditions
DC
δ = 0.5 ; Tmb ≤ 98 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse
IF = 16 A; Tj = 25 °C; Fig. 6
IF = 32 A; Tj = 25 °C; Fig. 6
IF = 16 A; Tj = 125 °C; Fig. 6
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
1200 V
-
-
16
A
-
-
150 A
-
-
165 A
-
2.3 3
V
-
2.8 3.9 V
-
1.8 2.7 V
-
40
-
ns




 BYR16W-1200
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
K
cathode
2
A
anode
mb
mb
mounting base; connected to
cathode
BYR16W-1200
Ultrafast power diode
Graphic symbol
K
A
001aaa020
1
2
TO-247 (SOD142)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYR16W-1200
TO-247
Description
Plastic Single-ended through-hole package; Heatsink mounted;
1 mounting hole; 2-lead TO-247
Version
SOD142
BYR16W-1200
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 11




 BYR16W-1200
WeEn Semiconductors
BYR16W-1200
Ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VRWM
crest working reverse
voltage
VR
IF(AV)
reverse voltage
average forward current
DC
δ = 0.5 ; Tmb ≤ 98 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Tmb ≤ 98 °C; square-
current
wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave
forward current
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
1200 V
-
1200 V
-
1200 V
-
16
A
-
32
A
-
150 A
-
165 A
-55 150 °C
-
150 °C
80
Ptot
(W)
60
40
20
0.2
0.1
aaa-010610
δ=1
0.5
60
Ptot
(W)
40
20
aaa-010611
a = 1.57
1.9
2.2
2.8
4.0
0
0
5
10
15
20
25
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
Vo = 0.79 V; Rs = 0.008 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
0
0
5
10
15
IF(AV) (A)
a = form factor = IF(RMS) / IF(AV)
Vo = 2.210 V; Rs = 0.032
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYR16W-1200
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 11




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