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Barrier Rectifier. MBR10100G Datasheet

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Barrier Rectifier. MBR10100G Datasheet
















MBR10100G Rectifier. Datasheet pdf. Equivalent













Part

MBR10100G

Description

Schottky Barrier Rectifier



Feature


Schottky Barrier Rectifier INCHANGE Sem iconductor MBR10100G FEATURES ·Low Fo rward Voltage ·Guaranteed Reverse Aval anche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Char ge Majority Carrier Conduction ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epox y, Molded ·Finish: All Ex.
Manufacture

INCHANGE

Datasheet
Download MBR10100G Datasheet


INCHANGE MBR10100G

MBR10100G; ternal Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purpose s: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Worki ng Peak Reverse Voltage DC Blocking Vol tage Average Rectified Forward Current (Rated VR) TC= 133℃ 10.


INCHANGE MBR10100G

0 V 10 A Peak Repetitive Forward Cur rent IFRM (Rated VR,Square Wave,20kHz ) TC= 133℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A w ave, single phase, 60Hz) IRRM Peak Re petitive Reverse Surge Current (20μs, 1.0kHz) 0.5 A TJ Junction Temperatu re -65~175 ℃ Tstg Storage Temperat ure Range -65~175 ℃ i.


INCHANGE MBR10100G

sc website:www.iscsemi.com 1 isc & is csemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconduc tor MBR10100G THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res istance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pul se Test: Pulse Width=300μs,Duty Cycle 2%) SYMBOL PARAMETER CONDITIONS I F= 10A ; TC= 125℃ VF Ma.





Part

MBR10100G

Description

Schottky Barrier Rectifier



Feature


Schottky Barrier Rectifier INCHANGE Sem iconductor MBR10100G FEATURES ·Low Fo rward Voltage ·Guaranteed Reverse Aval anche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Char ge Majority Carrier Conduction ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epox y, Molded ·Finish: All Ex.
Manufacture

INCHANGE

Datasheet
Download MBR10100G Datasheet




 MBR10100G
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10100G
FEATURES
·Low Forward Voltage
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 133
100
V
10
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz) TC= 133
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~175
Tstg
Storage Temperature Range
-65~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MBR10100G
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10100G
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle2%)
SYMBOL
PARAMETER
CONDITIONS
IF= 10A ; TC= 125
VF
Maximum Instantaneous Forward Voltage
IF= 10A ; TC= 25
IF= 20A ; TC= 125
IF= 20A ; TC= 25
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 125
Rated DC Voltage, TC= 25
MAX
0.7
0.8
0.85
0.95
6.0
0.1
UNIT
V
mA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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