DatasheetsPDF.com

Schottky Rectifier. VS-MBRB745-M3 Datasheet

DatasheetsPDF.com

Schottky Rectifier. VS-MBRB745-M3 Datasheet
















VS-MBRB745-M3 Rectifier. Datasheet pdf. Equivalent













Part

VS-MBRB745-M3

Description

High Performance Schottky Rectifier



Feature


www.vishay.com VS-MBRB735-M3, VS-MBRB74 5-M3 Vishay Semiconductors High Perfor mance Schottky Rectifier, 7.5 A Base c athode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF( AV) 7.5 A VR 35 V, 45 V VF at IF 0 .57 V IRM 15 mA at 125 °C TJ max. 150 °C EAS Package 7 mJ D2PAK (TO-26 3AB) Circuit configuration Single FE ATURES • 150 °C TJ o.
Manufacture

Vishay

Datasheet
Download VS-MBRB745-M3 Datasheet


Vishay VS-MBRB745-M3

VS-MBRB745-M3; peration • High frequency operation Low forward voltage drop • High pur ity, high temperature epoxy encapsulati on for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reli ability • Meets MSL level 1, per J-ST D-020, LF maximum peak of 245 °C • D esigned and qualified according to JEDE C®-JESD 47 • Material categoriz.


Vishay VS-MBRB745-M3

ation: for definitions of compliance ple ase see www.vishay.com/doc?99912 DESCRI PTION The VS-MBRB7... Schottky rectifie r series has been optimized for low rev erse leakage at high temperature. The p roprietary barrier technology allows fo r reliable operation up to 150 °C junc tion temperature. Typical applications are in switching power supplies, conver ters, freewheeling .


Vishay VS-MBRB745-M3

diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IF SM Rectangular waveform tp = 5 μs sin e VF 7.5 Apk, TJ = 125 °C TJ Range VALUES 7.5 35, 45 690 0.57 -65 to +15 0 UNITS A V A V °C VOLTAGE RATINGS P ARAMETER Maximum DC reverse voltage Max imum working peak reverse voltage SYMB OL VR VRWM VS-MBRB735-.





Part

VS-MBRB745-M3

Description

High Performance Schottky Rectifier



Feature


www.vishay.com VS-MBRB735-M3, VS-MBRB74 5-M3 Vishay Semiconductors High Perfor mance Schottky Rectifier, 7.5 A Base c athode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF( AV) 7.5 A VR 35 V, 45 V VF at IF 0 .57 V IRM 15 mA at 125 °C TJ max. 150 °C EAS Package 7 mJ D2PAK (TO-26 3AB) Circuit configuration Single FE ATURES • 150 °C TJ o.
Manufacture

Vishay

Datasheet
Download VS-MBRB745-M3 Datasheet




 VS-MBRB745-M3
www.vishay.com
VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
Base
cathode
2
2
1
3
D2PAK (TO-263AB)
1
N/C
3
Anode
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VR
35 V, 45 V
VF at IF
0.57 V
IRM
15 mA at 125 °C
TJ max.
150 °C
EAS
Package
7 mJ
D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRB7... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF
7.5 Apk, TJ = 125 °C
TJ
Range
VALUES
7.5
35, 45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB735-M3
35
VS-MBRB745-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current IF(AV)
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
TC = 131 °C, rated VR
Following any rated load condition
5 μs sine or 3 μs rect. pulse
and with rated VRRM applied
Surge applied at rated load condition halfwave single phase 60 Hz
TJ = 25 °C, IAS = 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
7.5
690
150
7
2
UNITS
A
mJ
A
Revision: 06-Nov-17
1
Document Number: 96396
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VS-MBRB745-M3
www.vishay.com
VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
15 A
7.5 A
15 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D2PAK (TO-263AB)
VALUES
-65 to 150
-65 to 175
UNITS
°C
3.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB735
MBRB745
Revision: 06-Nov-17
2
Document Number: 96396
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VS-MBRB745-M3
www.vishay.com
VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
100
10
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
TJ = 25 °C
10
1
0.1
0.01
0.001
0.00001
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 06-Nov-17
3
Document Number: 96396
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




Recommended third-party VS-MBRB745-M3 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)