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Schottky Rectifier. VS-MBRB2535CT-M3 Datasheet

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Schottky Rectifier. VS-MBRB2535CT-M3 Datasheet
















VS-MBRB2535CT-M3 Rectifier. Datasheet pdf. Equivalent













Part

VS-MBRB2535CT-M3

Description

High Performance Schottky Rectifier



Feature


www.vishay.com VS-MBRB25..CT-M3, VS-MBR 25..CT-M3 Vishay Semiconductors High P erformance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Ba se common cathode 2 TO-262AA Base comm on cathode 2 2 1 Common 3 Anode cathod e Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF a t IF IRM max. TJ m.
Manufacture

Vishay

Datasheet
Download VS-MBRB2535CT-M3 Datasheet


Vishay VS-MBRB2535CT-M3

VS-MBRB2535CT-M3; ax. EAS Package 2 x 15 A 35 V, 45 V See datasheet 40 mA at 125 °C 150 °C 16 mJ D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode FEATURES • 150 °C TJ operation • Center ta p D2PAK (TO-263AB) and TO-262AA package s • Low forward voltage drop • High frequency operation • High purity, h igh temperature epoxy encapsulation for enhanced mechanical strength a.


Vishay VS-MBRB2535CT-M3

nd moisture resistance • Guard ring fo r enhanced ruggedness and long term rel iability • Meets MSL level 1, per J-S TD-020, LF maximum peak of 245 °C • Designed and qualified according to JED EC®-JESD 47 • Material categorizatio n: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTI ON This center tap Schottky rectifier h as been optimized for low re.


Vishay VS-MBRB2535CT-M3

verse leakage at high temperature. The p roprietary barrier technology allows fo r reliable operation up to 150 °C junc tion temperature. Typical applications are in switching power supplies, conver ters, freewheeling diodes, and reverse battery protection.      MAJOR RATINGS AND CHARACTERISTICS SY MBOL CHARACTERISTICS IF(AV) IFRM VRRM IFSM VF TJ Rectangular wave.





Part

VS-MBRB2535CT-M3

Description

High Performance Schottky Rectifier



Feature


www.vishay.com VS-MBRB25..CT-M3, VS-MBR 25..CT-M3 Vishay Semiconductors High P erformance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Ba se common cathode 2 TO-262AA Base comm on cathode 2 2 1 Common 3 Anode cathod e Anode VS-MBRB25..CT-M3 2 1 Common 3 Anode cathode Anode VS-MBR25..CT-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF a t IF IRM max. TJ m.
Manufacture

Vishay

Datasheet
Download VS-MBRB2535CT-M3 Datasheet




 VS-MBRB2535CT-M3
www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
2
1
3
1
2
D2PAK (TO-263AB)
3
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-MBRB25..CT-M3
2
1 Common 3
Anode cathode Anode
VS-MBR25..CT-1-M3
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
2 x 15 A
35 V, 45 V
See datasheet
40 mA at 125 °C
150 °C
16 mJ
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• 150 °C TJ operation
• Center tap D2PAK (TO-263AB) and TO-262AA
packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFRM
VRRM
IFSM
VF
TJ
Rectangular waveform (per device)
TC = 130 °C (per leg)
tp = 5 μs sine
30 Apk, TJ = 125 °C
Range
VALUES
30
30
35/45
1060
0.73
-65 to +150
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-MBRB2535CT-M3
VS-MBR2535CT-1-M3
35
VS-MBRB2545CT-M3
VS-MBR2545CT-1-M3
45
UNITS
A
V
A
V
°C
UNITS
V
Revision: 03-Nov-17
1
Document Number: 96406
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VS-MBRB2535CT-M3
www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
TC = 130 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 130 °C
5 μs sine or 3 μs
rect. pulse
Following any rated load
condition and with rated
VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
30
30
1060
150
16
2
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous
reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
30 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.82
0.73
0.2
40
0.355
12.3
700
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
TJ
TStg
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style D2PAK (TO-263AB)
Case style TO-262AA
VALUES
-65 to 150
-65 to 175
UNITS
°C
1.5
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB2535CT
MBRB2545CT
MBR2535CT-1
MBR2545CT-1
Revision: 03-Nov-17
2
Document Number: 96406
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VS-MBRB2535CT-M3
www.vishay.com
VS-MBRB25..CT-M3, VS-MBR25..CT-M3
Vishay Semiconductors
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
100
10
TJ = 150 °C
1
0.1
0.01
0.001
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage
(Per Leg)
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 03-Nov-17
3
Document Number: 96406
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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