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CONTROLLED RECTIFIER. TIC106N Datasheet

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CONTROLLED RECTIFIER. TIC106N Datasheet
















TIC106N RECTIFIER. Datasheet pdf. Equivalent













Part

TIC106N

Description

SILICON CONTROLLED RECTIFIER



Feature


TIC106 SERIES SILICON CONTROLLED RECTIFI ERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 200 µA This series is obsolete a nd not recommended for new designs. TO -220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute m aximum ratings over.
Manufacture

BOURNS

Datasheet
Download TIC106N Datasheet


BOURNS TIC106N

TIC106N; operating case temperature (unless othe rwise noted) RATING SYMBOL TIC106D OBSOLETE Repetitive peak off-state volt age (see Note 1) TIC106M TIC106S TIC1 06N TIC106D Repetitive peak reverse v oltage TIC106M TIC106S TIC106N Conti nuous on-state current at (or below) 80 °C case temperature (see Note 2) Aver age on-state current (180° conduction angle) at (or below).


BOURNS TIC106N

80°C case temperature (see Note 3) S urge on-state current at (or below) 25 C (see Note 4) Peak positive gate cur rent (pulse width ≤ 300 µs) Peak ga te power dissipation (pulse width ≤ 3 00 µs) Average gate power dissipation (see Note 5) Operating case temperatu re range Storage temperature range Le ad temperature 1.6 mm from case for 10 seconds VDRM VRRM IT(RMS).


BOURNS TIC106N

IT(AV) ITSM IGM PGM PG(AV) TC Tstg TL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A A W W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k . 2. These values apply for continuous dc operation with resistive load. Abov e 80°C derate linearly to zero at 110 C. 3. This value may be .





Part

TIC106N

Description

SILICON CONTROLLED RECTIFIER



Feature


TIC106 SERIES SILICON CONTROLLED RECTIFI ERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 200 µA This series is obsolete a nd not recommended for new designs. TO -220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute m aximum ratings over.
Manufacture

BOURNS

Datasheet
Download TIC106N Datasheet




 TIC106N
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 200 µA
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
K
1
A
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
TIC106D
OBSOLETE Repetitive peak off-state voltage (see Note 1)
TIC106M
TIC106S
TIC106N
TIC106D
Repetitive peak reverse voltage
TIC106M
TIC106S
TIC106N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current at (or below) 25°C (see Note 4)
Peak positive gate current (pulse width 300 µs)
Peak gate power dissipation (pulse width 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
400
600
700
800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
UNIT
V
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1




 TIC106N
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
RGK = 1 k
TC = 110°C
400
µA
IRRM
Repetitive peak
reverse current
VR = rated VRRM
IG = 0
TC = 110°C
1
mA
IGT Gate trigger current VAA = 12 V
RL = 100
tp(g) 20 µs
5
200
µA
VAA = 12 V
RL = 100
TC = - 40°C
1.2
tp(g) 20 µs
RGK = 1 k
VGT Gate trigger voltage
VAA = 12 V
tp(g) 20 µs
RL = 100
RGK = 1 k
0.4 0.6
1
V
VAA = 12 V
RL = 100
TC = 110°C
0.2
tp(g) 20 µs
RGK = 1 k
IH
Holding current
VAA = 12 V
Initiating IT = 10 mA
VAA = 12 V
Initiating IT = 10 mA
RGK = 1 k
RGK = 1 k
TC = - 40°C
8
mA
5
Peak on-state
VT
voltage
IT = 5 A
(See Note 6)
1.7
V
OBSOLETE dv/dt
Critical rate of rise of
off-state voltage
VD = rated VD
RGK = 1 k
TC = 110°C
10
V/µs
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.5 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.




 TIC106N
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT
DERATING CURVE
TI20AA
6
Continuous DC
5
ANODE POWER DISSIPATED
vs
ON-STATE CURRENT
100
TI20AB
TJ = 110°C
4
Φ = 180º
3
10
2
1
0
30
100
OBSOLETE
180°
Φ
Conduction
Angle
40 50 60 70 80 90 100 110
TC - Case Temperature - °C
Figure 1.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
TI20AC
TC 80 °C
No Prior Device Conduction
1
1
10
100
IT - On-State Current - A
Figure 2.
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI20AD
10
Gate Control Guaranteed
10
1
1
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
PRODUCT INFORMATION
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
0·1
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 4.
3




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