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12A SCR. TIC126N Datasheet

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12A SCR. TIC126N Datasheet
















TIC126N SCR. Datasheet pdf. Equivalent













Part

TIC126N

Description

12A SCR



Feature


® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC1 26 Series(12A SCRS) TIC126 series 12A Continuous On-State Current 400V to 80 0V Off-State Voltage Max IGT of 20mA T O-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-st ate voltage TIC126D TIC126M TIC126S TI C126N VRRM Repetitive peak raverse vol tage TIC126D TIC12.
Manufacture

Qidong Jilai

Datasheet
Download TIC126N Datasheet


Qidong Jilai TIC126N

TIC126N; 6M TIC126S TIC126N Continuous on-state current at(or below) 80 IT(RMS) case te mperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV ) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s ) Peak gate power dissipation(pulse wid th 300 s) Average gate power dissipatio n Operating case t.


Qidong Jilai TIC126N

emperature range Storage temperature Va lue 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 110 -40 125 Units V V A A A A W W ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TEC HNICAL DATA TIC126 series THERMAL RES ISTANCE Symbol Parameter Rth(j-c) J unction to case thermal resistance Rtj (j-a) Junction to free air thermal res istance Value 2.4 .


Qidong Jilai TIC126N

62.5 Unit /W /W ELECTRICAL CHARACTERIS TICS at 25 case temperature Symbol Te sting conditions Min. Typ. Max. Unit IGT VGT IH VTM IDRM IRRM dv/dt VAA=6V, RL=100 , tp(g) 20 s VAA=6V, RL=100 , T C=-40 tp(g) 20 s RGK=1K VAA=6V, RL=100 , tp(g) 20 s RGK=1K VAA=6V, RL=100 , TC =110 tp(g) 20 s RGK=1K VAA=6V, RGK=1K , TC=-40 Initiating IT=100mA VAA=6V, RGK =1K , Initiating I.





Part

TIC126N

Description

12A SCR



Feature


® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC1 26 Series(12A SCRS) TIC126 series 12A Continuous On-State Current 400V to 80 0V Off-State Voltage Max IGT of 20mA T O-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-st ate voltage TIC126D TIC126M TIC126S TI C126N VRRM Repetitive peak raverse vol tage TIC126D TIC12.
Manufacture

Qidong Jilai

Datasheet
Download TIC126N Datasheet




 TIC126N
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 Series(12A SCRS)
TIC126 series
12A Continuous On-State Current
400V to 800V Off-State Voltage
Max IGT of 20mA
TO-220 PACKAGE
ABSOLUTE RATING
Symbol
Parameter
VDRM Repetitive peak off-state voltage
TIC126D
TIC126M
TIC126S
TIC126N
VRRM Repetitive peak raverse voltage
TIC126D
TIC126M
TIC126S
TIC126N
Continuous on-state current at(or below) 80
IT(RMS) case temperature
Average on-state current(180 conduction
IT(AV) angle) at (or below) 80 case temperature
ITM
IGM
PGM
PG(AV)
TC
Tstg
Surge on-state current
Peak positive gate current(pulse width 300 s)
Peak gate power dissipation(pulse width 300 s)
Average gate power dissipation
Operating case temperature range
Storage temperature
Value
400
600
700
800
400
600
700
800
12
7.5
100
3
5
1
-40 110
-40 125
Units
V
V
A
A
A
A
W
W




 TIC126N
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 series
THERMAL RESISTANCE
Symbol
Parameter
Rth(j-c)
Junction to case thermal resistance
Rtj(j-a)
Junction to free air thermal resistance
Value
2.4
62.5
Unit
/W
/W
ELECTRICAL CHARACTERISTICS at 25 case temperature
Symbol
Testing conditions
Min. Typ. Max. Unit
IGT
VGT
IH
VTM
IDRM
IRRM
dv/dt
VAA=6V, RL=100 , tp(g) 20 s
VAA=6V, RL=100 , TC=-40
tp(g) 20 s RGK=1K
VAA=6V, RL=100 ,
tp(g) 20 s RGK=1K
VAA=6V, RL=100 , TC=110
tp(g) 20 s RGK=1K
VAA=6V, RGK=1K , TC=-40
Initiating IT=100mA
VAA=6V, RGK=1K ,
Initiating IT=100mA
ITM=12A
VD=ratedVDRM, RGK=1K , TC=110
VR=ratedVRRM, IG=0, TC=110
VD=rated VD, RGK=1K , TC=110
-
5
20 mA
-
-
2.5
-
0.8 1.5
V
0.2
-
-
-
-
70
mA
-
-
40
-
-
1.4
V
-
-
2
mA
-
-
2
mA
-
100
- V/ s








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