DatasheetsPDF.com

Triac. BCR12CM-12LB Datasheet

DatasheetsPDF.com

Triac. BCR12CM-12LB Datasheet
















BCR12CM-12LB Triac. Datasheet pdf. Equivalent













Part

BCR12CM-12LB

Description

Triac



Feature


BCR12CM-12LB 600V - 12A - Triac Medium P ower Use Features β€’ IT (RMS) : 12 A β €’ VDRM : 600 V β€’ IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6 Data Sheet R0 7DS1030EJ0500 Rev.5.00 Jun. 28, 2018 β€ ’ Tj: 150Β°C β€’ Non-insulated Type β€’ Planar Passivation Type Outline RENE SAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 RENESAS Package cod e: PRSS0004AT-A (Package name: .
Manufacture

Renesas

Datasheet
Download BCR12CM-12LB Datasheet


Renesas BCR12CM-12LB

BCR12CM-12LB; TO-220ABA) 4 123 123 2, 4 1. T1 Termi nal 2. T2 Terminal 3. Gate Terminal 3 4 . T2 Terminal 1 Application Power supp ly, motor control, heater control, sole noid control, and other general purpose AC control applications. Maximum Rati ngs Parameter Repetitive peak off-stat e voltageNote1 Non-repetitive peak off- state voltageNote1 Symbol VDRM VDSM V oltage class 12 60.


Renesas BCR12CM-12LB

0 720 Unit V V Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Aver age gate power dissipation Peak gate vo ltage Peak gate current Junction Temper ature Storage temperature Symbol IT (R MS) Ratings 12 ITSM 120 I2t 60 PG M PG (AV) VGM IGM Tj Tstg 5 0.5 10 2 β €“40 to +150 –40 to +150 Unit Condi tions A Commercial f.


Renesas BCR12CM-12LB

requency, sine full wave 360ο‚° conduct ion, Tc = 123ο‚°CNote3 A 60 Hz sinewa ve 1 full cycle, peak value, non-repet itive A2s Value corresponding to 1 cyc le of half wave 60 Hz, surge on-state current W W V A ο‚°C ο‚°C R07DS1 030EJ0500 Rev.5.00 Jun. 28, 2018 Page 1 of 8 BCR12CM-12LB Data Sheet Elect rical Characteristics Parameter Symbo l Min. Typ. Max. Unit .





Part

BCR12CM-12LB

Description

Triac



Feature


BCR12CM-12LB 600V - 12A - Triac Medium P ower Use Features β€’ IT (RMS) : 12 A β €’ VDRM : 600 V β€’ IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6 Data Sheet R0 7DS1030EJ0500 Rev.5.00 Jun. 28, 2018 β€ ’ Tj: 150Β°C β€’ Non-insulated Type β€’ Planar Passivation Type Outline RENE SAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 RENESAS Package cod e: PRSS0004AT-A (Package name: .
Manufacture

Renesas

Datasheet
Download BCR12CM-12LB Datasheet




 BCR12CM-12LB
BCR12CM-12LB
600V - 12A - Triac
Medium Power Use
Features
β€’ IT (RMS) : 12 A
β€’ VDRM : 600 V
β€’ IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6
Data Sheet
R07DS1030EJ0500
Rev.5.00
Jun. 28, 2018
β€’ Tj: 150Β°C
β€’ Non-insulated Type
β€’ Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AT-A
(Package name: TO-220ABA)
4
123
123
2, 4
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3 4. T2 Terminal
1
Application
Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
IT (RMS)
Ratings
12
ITSM
120
I2t
60
PGM
PG (AV)
VGM
IGM
Tj
Tstg
5
0.5
10
2
–40 to +150
–40 to +150
Unit
Conditions
A
Commercial frequency, sine full wave 360ο‚°
conduction, Tc = 123ο‚°CNote3
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
A
ο‚°C
ο‚°C
R07DS1030EJ0500 Rev.5.00
Jun. 28, 2018
Page 1 of 8




 BCR12CM-12LB
BCR12CM-12LB
Data Sheet
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current IDRM
β€”
β€”
2.0
mA Tj = 150ο‚°C, VDRM applied
On-state voltage
VTM
β€”
β€”
1.6
V
Tc = 25ο‚°C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2

VFGT
β€”
 VRGT
β€”
β€”
1.5
β€”
1.5
V
Tj = 25ο‚°C, VD = 6 V, RL = 6 ,
V
RG = 330 
 VRGT
β€”
β€”
1.5
V
Gate trigger curentNote2

IFGT
β€”

IRGT
β€”
 IRGT
β€”
β€”
30 Note6
mA Tj = 25ο‚°C, VD = 6 V, RL = 6 ,
β€”
30 Note6
mA RG = 330 
β€”
30 Note6
mA
Gate non-trigger voltage
VGD
0.2
β€”
β€”
V
Tj = 125ο‚°C, VD = 1/2 VDRM
Thermal resistance
0.1
β€”
β€”
V
Tj = 150ο‚°C, VD = 1/2 VDRM
Rth (j-c)
β€”
β€”
1.8
ο‚°C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state (dv/dt)c 10
β€”
β€”
V/s Tj = 125ο‚°C
commutation voltageNote5
1
β€”
β€”
V/s Tj = 150ο‚°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0ο‚°C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (IGT ο‚£ 20 mA) is also available. (IGT item:1)
Test conditions
1. Junction temperature
Tj = 125Β°C/150Β°C
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS1030EJ0500 Rev.5.00
Jun. 28, 2018
Page 2 of 8




 BCR12CM-12LB
BCR12CM-12LB
Performance Curves
Maximum On-State Characteristics
102
Tj = 150Β°C
101
Tj = 25Β°C
100
0
1
2
3
4
On-State Voltage (V)
Gate Characteristics (I, II and III)
VGM = 10V
101
PG(AV) = 0.5W
PGM = 5W
VGT = 1.5V
IGM = 2A
100
10- 1
IFGT I IRGT I, IRGT III
VGD = 0.1V
101
102
103
104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
101
- 40 0
40 80 120 160
Junction Temperature (Β°C)
R07DS1030EJ0500 Rev.5.00
Jun. 28, 2018
Data Sheet
Rated Surge On-State Current
200
180
160
140
120
100
80
60
40
20
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
IRGT I
102
IFGT I
IRGT III
101
- 40 0
40 80 120 160
Junction Temperature (Β°C)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
IFGT I
IRGT I
IRGT III
102
101
100
101
102
Gate Current Pulse Width (s)
Page 3 of 8




Recommended third-party BCR12CM-12LB Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)