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NPN Transistor. BUS48AP Datasheet

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NPN Transistor. BUS48AP Datasheet
















BUS48AP Transistor. Datasheet pdf. Equivalent













Part

BUS48AP

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage Capability ·High Current Capability ·Fast Switching Spe ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hi gh-voltage,high-speed, power switching in inductive circuits where fall time i s critical. They are particulary suited for line-operated swt.
Manufacture

INCHANGE

Datasheet
Download BUS48AP Datasheet


INCHANGE BUS48AP

BUS48AP; chmode applications Absolute maximum ra tings(Ta=25℃) SYMBOL PARAMETER VCE V Collector-Emitter Voltage VCEO Col lector-Emitter Voltage VEBO Emitter-B ase Voltage IC Collector Current-Cont inuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Cu rrent-peak PC Collector Power Dissipa tion @TC=25℃ Tj Junction Temperatur e Tstg Storage Tempe.


INCHANGE BUS48AP

rature Range VALUE UNIT 1000 V 450 V 7 V 15 A 30 A 5 A 20 A 150 W 150 ℃ -65~150 ℃ THERMAL CHA RACTERISTICS SYMBOL PARAMETER MAX UN IT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W BUS48AP isc websit e:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERI STICS TC=25℃ unless otherw.


INCHANGE BUS48AP

ise specified SYMBOL PARAMETER CONDIT IONS VCEO(SUS) Collector-Emitter Susta ining Voltage IC= 50mA; IB= 0; V(BR)EB O Emitter-Base Breakdown Voltage IE= 1 mA; IC= 0 VCE(sat)-1 Collector-Emitte r Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ VCE (sat)- 2 Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A VBE(sat) Base-Emitte r Saturation Voltage.





Part

BUS48AP

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage Capability ·High Current Capability ·Fast Switching Spe ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hi gh-voltage,high-speed, power switching in inductive circuits where fall time i s critical. They are particulary suited for line-operated swt.
Manufacture

INCHANGE

Datasheet
Download BUS48AP Datasheet




 BUS48AP
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1000
V
450
V
7
V
15
A
30
A
5
A
20
A
150
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 /W
BUS48AP
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUS48AP
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0;
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A;TC= 100
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Base Cutoff Current
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A;TC= 100
VCE=1000V; IE= 0
VCE=1000V; IE= 0;TC=125
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 8A; VCE= 5V
BUS48AP
MIN MAX UNIT
450
V
7
V
1.5
2.0
V
5.0
V
1.6
1.6
V
0.2
2.0
mA
0.1 mA
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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