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NPN Transistor. BUW11W Datasheet

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NPN Transistor. BUW11W Datasheet
















BUW11W Transistor. Datasheet pdf. Equivalent













Part

BUW11W

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage ·High Speed Switc hing ·Minimum Lot-to-Lot variations fo r robust device performance and reliabl e operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Mo tor control systems ABSOLUTE MAXIMUM R ATINGS (Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCBO Collector-Base Voltag e 850 V VCEO Collector-E.
Manufacture

INCHANGE

Datasheet
Download BUW11W Datasheet


INCHANGE BUW11W

BUW11W; mitter Voltage 400 V VEBO Emitter-Ba se Voltage 9 V IC Collector Current -Continuous 5 A ICM Collector Curre nt-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Juncti on Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~1 50 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R.


INCHANGE BUW11W

th j-c Thermal Resistance,Junction to Ca se 1.25 ℃/W BUW11W isc website:ww w.iscsemi.cn 1 isc & iscsemi is regist ered trademark isc Silicon NPN Power T ransistor BUW11W ELECTRICAL CHARACTER ISTICS TC=25℃ unless otherwise specif ied SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emi tter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat) Colle.


INCHANGE BUW11W

ctor-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cu toff Current IEBO Emitter Cutoff Curr ent IC= 3A; IB= 0.6A VCE=RatedVCES ;VB E= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ VE B= 9V; IC= 0 1.4 V 1.0 2.0 mA 10 m A hFE-1 DC Current Gain IC= 5mA ; VC E= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V .





Part

BUW11W

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage ·High Speed Switc hing ·Minimum Lot-to-Lot variations fo r robust device performance and reliabl e operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Mo tor control systems ABSOLUTE MAXIMUM R ATINGS (Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCBO Collector-Base Voltag e 850 V VCEO Collector-E.
Manufacture

INCHANGE

Datasheet
Download BUW11W Datasheet




 BUW11W
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
850
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
100
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 /W
BUW11W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 BUW11W
isc Silicon NPN Power Transistor
BUW11W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 0.6A
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125
VEB= 9V; IC= 0
1.4
V
1.0
2.0
mA
10 mA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
10
35
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
10
35
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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