DatasheetsPDF.com

NPN Transistor. MJ13333 Datasheet

DatasheetsPDF.com

NPN Transistor. MJ13333 Datasheet
















MJ13333 Transistor. Datasheet pdf. Equivalent













Part

MJ13333

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 400V(Min) · Reve rsed Biased SOA with Inductive Loads · Minimum Lot-to-Lot variations for robus t device performance and reliable opera tion APPLICATIONS • Switching Regula tors • Inverters • Solenoid and Rel ay Drivers • Motor Controls • Defle ction Circuits ABSOLUTE MAXIMU.
Manufacture

INCHANGE

Datasheet
Download MJ13333 Datasheet


INCHANGE MJ13333

MJ13333; M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Volta ge 700 V VCEO Collector-Emitter Volt age 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuou s 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC= 25℃ 175 W Tstg Storage Temperature -65~200 ℃ THERMAL C.


INCHANGE MJ13333

HARACTERISTICS SYMBOL PARAMETER Rth j -c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13333 isc webs ite: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon N PN Power Transistor ELECTRICAL CHARACT ERISTICS TC=25℃ unless otherwise spec ified SYMBOL PARAMETER CONDITIONS V CEO(SUS) Collector-Emitter Sustaining V oltage IC=50mA ; IB=0 V.


INCHANGE MJ13333

CE(sat)-1 Collector-Emitter Saturation V oltage IC= 10A; IB= 2A VCE(sat)-2 Coll ector-Emitter Saturation Voltage IC= 20 A; IB= 6.7A VBE(sat) Base-Emitter Satu ration Voltage IC= 10A; IB= 2A ICBO Collector Cutoff Current VCB= 700V; IE = 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 5V MJ13333 MIN TYP. MAX UNIT 400 V 1.8 V 5.





Part

MJ13333

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 400V(Min) · Reve rsed Biased SOA with Inductive Loads · Minimum Lot-to-Lot variations for robus t device performance and reliable opera tion APPLICATIONS • Switching Regula tors • Inverters • Solenoid and Rel ay Drivers • Motor Controls • Defle ction Circuits ABSOLUTE MAXIMU.
Manufacture

INCHANGE

Datasheet
Download MJ13333 Datasheet




 MJ13333
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
· Reversed Biased SOA with Inductive Loads
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector- Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25175
W
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
/W
MJ13333
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJ13333
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 6.7A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 700V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
MJ13333
MIN TYP. MAX UNIT
400
V
1.8
V
5.0
V
1.8
V
0.25 mA
1 mA
10
60
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








Recommended third-party MJ13333 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)