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PNP Transistor. MJE4350 Datasheet

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PNP Transistor. MJE4350 Datasheet
















MJE4350 Transistor. Datasheet pdf. Equivalent













Part

MJE4350

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistors MJE43 50/4351/4352/4353 DESCRIPTION ·Collec tor-Emitter Sustaining Voltage- : VCEO( SUS) = -100V(Min)- MJE4350 = -120V(Min) - MJE4351 = -140V(Min)- MJE4352 = -160V (Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4 342/4343 APPLICATIONS ·Designed for u se in high power audio amplifier applic ations and high voltag.
Manufacture

INCHANGE

Datasheet
Download MJE4350 Datasheet


INCHANGE MJE4350

MJE4350; e switching regulator circuits. ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE MJE4350 -100 VCBO Col lector-Base Voltage MJE4351 MJE4352 - 120 -140 MJE4353 -160 MJE4350 -100 V CEO Collector-Emitter Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 VEBO Emitter-Base Voltage -7 IC Collect or Current-Continuous -16 ICM Collec tor Current-Peak -2.


INCHANGE MJE4350

0 IB Base Current-Continuous -5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Ts tg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CH ARACTERISTICS SYMBOL PARAMETER Rth j -c Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website:ww w.iscsemi.com 1 isc & iscsemi is regis tered trademark isc Silicon.


INCHANGE MJE4350

PNP Power Transistors MJE4350/4351/435 2/4353 ELECTRICAL CHARACTERISTICS TC=2 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE4350 -100 VCEO(SUS) Collector-Emi tter Sustaining Voltage MJE4351 MJE435 2 IC= -50mA ;IB= 0 -120 V -140 VCE(s at)-1 VCE(sat)-2 VBE(sat) MJE4353 Col lector-Emitter Voltage Collector-Emitte r Voltage Saturatio.





Part

MJE4350

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistors MJE43 50/4351/4352/4353 DESCRIPTION ·Collec tor-Emitter Sustaining Voltage- : VCEO( SUS) = -100V(Min)- MJE4350 = -120V(Min) - MJE4351 = -140V(Min)- MJE4352 = -160V (Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4 342/4343 APPLICATIONS ·Designed for u se in high power audio amplifier applic ations and high voltag.
Manufacture

INCHANGE

Datasheet
Download MJE4350 Datasheet




 MJE4350
isc Silicon PNP Power Transistors
MJE4350/4351/4352/4353
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)- MJE4350
= -120V(Min)- MJE4351
= -140V(Min)- MJE4352
= -160V(Min)- MJE4353
·Low Saturation Voltage
·Complement to the NPN MJE4340/4341/4342/4343
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
MJE4350 -100
VCBO
Collector-Base
Voltage
MJE4351
MJE4352
-120
-140
MJE4353 -160
MJE4350 -100
VCEO
Collector-Emitter
Voltage
MJE4351
MJE4352
-120
-140
MJE4353 -160
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-16
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-5
PC
Collector Power Dissipation
@ TC=25
125
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.0
UNIT
/W
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJE4350
isc Silicon PNP Power Transistors
MJE4350/4351/4352/4353
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
MJE4350
-100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJE4351
MJE4352
IC= -50mA ;IB= 0
-120
V
-140
VCE(sat)-1
VCE(sat)-2
VBE(sat)
MJE4353
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Saturation IC= -8A; IB= -0.8A
Saturation IC= -16A; IB= -2A
Base-Emitter Saturation Voltage
IC= -16A; IB= -2A
-160
-2.0
V
-3.5
V
-3.9
V
VBE(on) Base-Emitter On Voltage
IC= -16A; VCE= -4V
-3.9
V
MJE4350 VCE= -100V; IB= 0
-0.75
ICEO
Collector
Cutoff Current
MJE4351
MJE4352
VCE= -120V; IB= 0
VCE= -140V; IB= 0
-0.75
mA
-0.75
MJE4353 VCE= -160V; IB= 0
-0.75
ICBO
Collector Cutoff Current
VCB= Rated VCB ; IE=0
-0.75 mA
IEBO
Emitter Cutoff Current
VEB= -7V; IC=0
-1.0 mA
hFE-1
DC Current Gain
IC= -8A; VCE= -2V
15
hFE-2
DC Current Gain
IC= -16A; VCE= -4V
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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