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NPN Transistor. MJE4342 Datasheet

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NPN Transistor. MJE4342 Datasheet
















MJE4342 Transistor. Datasheet pdf. Equivalent













Part

MJE4342

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors MJE43 40/4341/4342/4343 DESCRIPTION ·Collec tor-Emitter Sustaining Voltage- : VCEO( SUS) = 100V(Min)- MJE4340 = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min )- MJE4343 ·Low Saturation Voltage ·C omplement to the PNP MJE4350/4351/4352/ 4353 APPLICATIONS ·Designed for use i n high power audio amplifier applicatio ns and high voltage sw.
Manufacture

INCHANGE

Datasheet
Download MJE4342 Datasheet


INCHANGE MJE4342

MJE4342; itching regulator circuits. ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL PARAME TER VALUE MJE4340 100 VCBO Collecto r- Base Voltage MJE4341 120 MJE4342 14 0 MJE4343 160 MJE4340 100 VCEO Coll ector-Emitter Voltage MJE4341 120 MJE4 342 140 MJE4343 160 VEBO Emitter-Bas e Voltage 7 IC Collector Current-Con tinuous 16 ICM Collector Current-Pea k 20 IB Base Curr.


INCHANGE MJE4342

ent-Continuous 5 PC Collector Power D issipation @ TC=25℃ 125 TJ Junctio n Temperature 150 Tstg Storage Tempe rature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SY MBOL PARAMETER Rth j-c Thermal Resist ance, Junction to Case MAX 1.0 UNIT /W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi.


INCHANGE MJE4342

stors MJE4340/4341/4342/4343 ELECTRICA L CHARACTERISTICS TC=25℃ unless other wise specified SYMBOL PARAMETER COND ITIONS MIN MAX UNIT MJE4340 100 VCE O(SUS) Collector-Emitter Sustaining Vo ltage MJE4341 MJE4342 IC= 50mA ;IB= 0 120 V 140 VCE(sat)-1 VCE(sat)-2 VBE( sat) MJE4343 Collector-Emitter Voltag e Collector-Emitter Voltage Saturation IC= 8A; IB= 0.8A Sa.





Part

MJE4342

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors MJE43 40/4341/4342/4343 DESCRIPTION ·Collec tor-Emitter Sustaining Voltage- : VCEO( SUS) = 100V(Min)- MJE4340 = 120V(Min)- MJE4341 = 140V(Min)- MJE4342 = 160V(Min )- MJE4343 ·Low Saturation Voltage ·C omplement to the PNP MJE4350/4351/4352/ 4353 APPLICATIONS ·Designed for use i n high power audio amplifier applicatio ns and high voltage sw.
Manufacture

INCHANGE

Datasheet
Download MJE4342 Datasheet




 MJE4342
isc Silicon NPN Power Transistors
MJE4340/4341/4342/4343
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)- MJE4340
= 120V(Min)- MJE4341
= 140V(Min)- MJE4342
= 160V(Min)- MJE4343
·Low Saturation Voltage
·Complement to the PNP MJE4350/4351/4352/4353
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
MJE4340 100
VCBO
Collector- Base
Voltage
MJE4341 120
MJE4342 140
MJE4343 160
MJE4340 100
VCEO
Collector-Emitter
Voltage
MJE4341 120
MJE4342 140
MJE4343 160
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
16
ICM
Collector Current-Peak
20
IB
Base Current-Continuous
5
PC
Collector Power Dissipation
@ TC=25
125
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.0
UNIT
/W
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJE4342
isc Silicon NPN Power Transistors
MJE4340/4341/4342/4343
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
MJE4340
100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJE4341
MJE4342
IC= 50mA ;IB= 0
120
V
140
VCE(sat)-1
VCE(sat)-2
VBE(sat)
MJE4343
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Saturation IC= 8A; IB= 0.8A
Saturation IC= 16A; IB= 2A
Base-Emitter Saturation Voltage
IC= 16A; IB= 2A
160
2.0
V
3.5
V
3.9
V
VBE(on) Base-Emitter On Voltage
IC= 16A; VCE= 4V
3.9
V
MJE4340 VCE= 100V; IB= 0
0.75
ICEO
Collector
Cutoff Current
MJE4341
MJE4342
VCE= 120V; IB= 0
VCE= 140V; IB= 0
0.75
mA
0.75
MJE4343 VCE= 160V; IB= 0
0.75
ICBO
Collector Cutoff Current
VCB= Rated VCB ; IE=0
0.75 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
1.0 mA
hFE-1
DC Current Gain
IC= 8A; VCE= 2V
15
hFE-2
DC Current Gain
IC= 16A; VCE= 4V
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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