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NPN Transistor. MJF44H11 Datasheet

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NPN Transistor. MJF44H11 Datasheet
















MJF44H11 Transistor. Datasheet pdf. Equivalent













Part

MJF44H11

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge- : VCE(sat)= 1.0V(Max.)@ IC= 8A ·Fa st Switching Speeds ·Complement to Typ e MJF45H11 ·Minimum Lot-to-Lot variati ons for robust device performance and r eliable operation APPLICATIONS ·Desig ned for general purpose power amplifica tion and switching such as output or dr iver stages in applicat.
Manufacture

INCHANGE

Datasheet
Download MJF44H11 Datasheet


INCHANGE MJF44H11

MJF44H11; ions such as switching regulators,conver ters and power amplifier. ABSOLUTE MAX IMUM RATINGS(Ta=25℃) SYMBOL PARAMET ER VALUE UNIT VCEO Collector-Emitte r Voltage 80 V VEBO Emitter-Base Vo ltage 5 V IC Collector Current-Cont inuous 10 A ICM Collector Current-P eak Collector Power Dissipation @TC=25 ℃ PC Collector Power Dissipation @Ta= 25℃ Tj Junction Temp.


INCHANGE MJF44H11

erature 20 A 36 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAM ETER MAX UNIT Rth j-c Thermal Resista nce, Junction to Case 3.5 ℃/W Rth j -a Thermal Resistance,Junction to Ambie nt 62.5 ℃/W MJF44H11 isc Website: www.iscsemi.com 1 isc & iscsemi is reg istered trademark isc Silicon NPN Powe r Transistors ELECTRICAL CH.


INCHANGE MJF44H11

ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION S VCEO(SUS) Collector-Emitter Sustaini ng Voltage IC= 30mA; IB= 0 VCE(sat) Co llector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A VBE(sat) Base-Emitter Sa turation Voltage IC= 8A ;IB= 0.8 A IC ES Collector Cutoff Current VCE=Rated VCEO; IEBO Emitter Cutoff Current V EB= 5V; IC= 0 hFE-1.





Part

MJF44H11

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge- : VCE(sat)= 1.0V(Max.)@ IC= 8A ·Fa st Switching Speeds ·Complement to Typ e MJF45H11 ·Minimum Lot-to-Lot variati ons for robust device performance and r eliable operation APPLICATIONS ·Desig ned for general purpose power amplifica tion and switching such as output or dr iver stages in applicat.
Manufacture

INCHANGE

Datasheet
Download MJF44H11 Datasheet




 MJF44H11
isc Silicon NPN Power Transistors
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 8A
·Fast Switching Speeds
·Complement to Type MJF45H11
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj
Junction Temperature
20
A
36
W
2
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.5 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
MJF44H11
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJF44H11
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 0.8 A
ICES
Collector Cutoff Current
VCE=Rated VCEO;
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
MJF44H11
MIN TYP MAX UNIT
80
V
1.0
V
1.5
V
1.0 μA
10 μA
60
40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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