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NPN Transistor. MJF13007 Datasheet

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NPN Transistor. MJF13007 Datasheet
















MJF13007 Transistor. Datasheet pdf. Equivalent













Part

MJF13007

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Coll ector Saturation Voltage : VCE(sat) = 2 .0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for use in high-voltage, hi gh-speed, power swit- ching in inductiv e circuit, they are part.
Manufacture

INCHANGE

Datasheet
Download MJF13007 Datasheet


INCHANGE MJF13007

MJF13007; icularly suited for 115 and 220V switchm ode applications such as switching regu lators,inverters,Motor controls,Solenoi d/Relay drivers and deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C ollector- Base Voltage 700 V VCEO Co llector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collect or Current-Continuou.


INCHANGE MJF13007

s 8 A ICM Collector Current-peak 16 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissi pation TC=25℃ Ti Junction Temperatu re 8 A 40 W 150 ℃ Tstg Storag e Temperature Range -65~150 ℃ THERM AL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Ju nction to Case 3.12 ℃/W Rth j-a The rmal Resistance,Junction t.


INCHANGE MJF13007

o Ambient 62.5 ℃/W MJF13007 isc Webs ite:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NP N Power Transistor ELECTRICAL CHARACTE RISTICS TC =25℃ unless otherwise spec ified SYMBOL PARAMETER CONDITIONS V CEO(SUS) Collector-Emitter Sustaining V oltage IC= 10mA; IB= 0 VCE(sat)-1 Coll ector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VCE(sat)-2 .





Part

MJF13007

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Coll ector Saturation Voltage : VCE(sat) = 2 .0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for use in high-voltage, hi gh-speed, power swit- ching in inductiv e circuit, they are part.
Manufacture

INCHANGE

Datasheet
Download MJF13007 Datasheet




 MJF13007
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
16
A
IB
Base Current
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
8
A
40
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
MJF13007
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJF13007
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A ;IB= 1A
TC= 100
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A ;IB= 2A
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2A ;IB= 0.4A
IC= 5A ;IB= 1A
TC= 100
VCB= 700V; TC= 125
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
MJF13007
MIN TYP. MAX UNIT
400
V
1.0
V
2.0
3.0
V
3.0
V
1.2
V
1.6
1.5
V
0.1
1.0
mA
0.1 mA
8
40
5
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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