DatasheetsPDF.com

NPN Transistor. MJH13090 Datasheet

DatasheetsPDF.com

NPN Transistor. MJH13090 Datasheet
















MJH13090 Transistor. Datasheet pdf. Equivalent













Part

MJH13090

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJH1 3090 = 450V(Min)—MJH13091 ·High Swit ching Speed ·Minimum Lot-to-Lot variat ions for robust device performance and reliable operation APPLICATIONS ·Desi gned for high-voltage ,high-speed, powe r switching in inductive circuits where fall time is critical. Th.
Manufacture

INCHANGE

Datasheet
Download MJH13090 Datasheet


INCHANGE MJH13090

MJH13090; ey are particularly suited for line oper ated switch-mode applications. ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE VCEV Collector-Emitter Voltage MJH13090 650 MJH13091 750 VCEO(SUS) Collector-Emitter Voltage MJH13090 400 MJH13091 450 VEBO Emi tter-Base Voltage 6 IC Collector Cur rent-Continuous 15 ICM Collector Cur rent-Peak 20 IB B.


INCHANGE MJH13090

ase Current-Continuous 5 IBM Base Cur rent-Peak 10 PC Collector Power Diss ipation @TC=25℃ 125 TJ Junction Te mperature 150 Tstg Storage Temperatu re -65~150 UNIT V V V A A A A W ℃ THERMAL CHARACTERISTICS SYMBOL PA RAMETER Rth j-c Thermal Resistance,Jun ction to Case MAX 1.0 UNIT ℃/W MJH 13090/13091 isc Website:www.iscsemi. com 1 isc & iscsemi is regi.


INCHANGE MJH13090

stered trademark isc Silicon NPN Power Transistors MJH13090/13091 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS VCEO(SUS) Collector-Emitter Sus taining Voltage MJH13090 MJH13091 IC= 30mA ; IB=0 VCE(sat)-1 Collector-Emit ter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC=100℃ VCE(sat)-2 Collector-Emitter Satu.





Part

MJH13090

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJH1 3090 = 450V(Min)—MJH13091 ·High Swit ching Speed ·Minimum Lot-to-Lot variat ions for robust device performance and reliable operation APPLICATIONS ·Desi gned for high-voltage ,high-speed, powe r switching in inductive circuits where fall time is critical. Th.
Manufacture

INCHANGE

Datasheet
Download MJH13090 Datasheet




 MJH13090
isc Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)—MJH13090
= 450V(Min)—MJH13091
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCEV
Collector-Emitter
Voltage
MJH13090
650
MJH13091
750
VCEO(SUS)
Collector-Emitter
Voltage
MJH13090
400
MJH13091
450
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current-Continuous
5
IBM
Base Current-Peak
10
PC
Collector Power Dissipation
@TC=25
125
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
/W
MJH13090/13091
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MJH13090
isc Silicon NPN Power Transistors
MJH13090/13091
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJH13090
MJH13091
IC=30mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VBE(sat)
ICBO
Base-Emitter Saturation Voltage
Collector
Cutoff Current
MJH13090
MJH13091
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100
VCEV=650V;IE=0
VCEV=650V; IE=0;TC=100
VCEV=750V;VBE(off)=1.5V
VCEV=750V;VBE(off)=1.5V;TC=100
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 10A ; VCE= 3V
MIN
TYP.
MA
X
400
450
1.0
2.0
3.0
1.5
1.5
0.5
2.5
0.5
2.5
1.0
UNIT
V
V
V
V
mA
mA
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








Recommended third-party MJH13090 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)