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NPN Transistor. T2141F Datasheet

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NPN Transistor. T2141F Datasheet
















T2141F Transistor. Datasheet pdf. Equivalent













Part

T2141F

Description

NPN Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Br eakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.) @ IC= 3A ·Low Collector Saturation Vol tage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Switching for dynam otor excitation ABSOLU.
Manufacture

INCHANGE

Datasheet
Download T2141F Datasheet


INCHANGE T2141F

T2141F; TE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 500 V VCEO Collector-Em itter Voltage 300 V VEBO Emitter-Ba se Voltage 5 V IC Collector Current -Continuous PC Collector Power Dissip ation @ TC=25℃ TJ Junction Temperat ure 6 A 60 W 150 ℃ Tstg Stora ge Temperature Range -55~150 ℃ T21 41F isc website: www.iscs.


INCHANGE T2141F

emi.com 1 isc & iscsemi is registered t rademark isc Silicon NPN Darlington Po wer Transistor ELECTRICAL CHARACTERIST ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)C EO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Bas e Breakdown Voltage IC=1mA; IE= 0 V(B R)EBO Emitter-Base Breakdown Voltage I E= 5mA; IC= 0 VCE(s.


INCHANGE T2141F

at)-1 Collector-Emitter Saturation Volta ge IC= 4A; IB= 16mA VCE(sat)-2 Collect or-Emitter Saturation Voltage IC=6A; IB = 24mA VBE(sat) Base-Emitter Saturatio n Voltage IC=6A; IB= 24mA ICBO Colle ctor Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A; VC E= 2V T2141F MIN TYP. MAX UNIT 300 V 500 V 5 V 1.





Part

T2141F

Description

NPN Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Br eakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.) @ IC= 3A ·Low Collector Saturation Vol tage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Switching for dynam otor excitation ABSOLU.
Manufacture

INCHANGE

Datasheet
Download T2141F Datasheet




 T2141F
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·High DC Current Gain
: hFE= 600(Min.)@ IC= 3A
·Low Collector Saturation Voltage
: VCE(sat)= 1.8V(Max.)@ IC= 4A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching for dynamotor excitation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
6
A
60
W
150
Tstg
Storage Temperature Range
-55~150
T2141F
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 T2141F
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB= 24mA
VBE(sat) Base-Emitter Saturation Voltage
IC=6A; IB= 24mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 2V
T2141F
MIN TYP. MAX UNIT
300
V
500
V
5
V
1.8
V
2.0
V
2.5
V
100 μA
5.0 mA
600
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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