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NPN Transistor. TIP33 Datasheet

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NPN Transistor. TIP33 Datasheet
















TIP33 Transistor. Datasheet pdf. Equivalent













Part

TIP33

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 40(Min) @IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Compl ement to Type TIP34 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for use in general purpose power amplifier and switching applicat ions. ABSOLUTE MAXIMUM.
Manufacture

INCHANGE

Datasheet
Download TIP33 Datasheet


INCHANGE TIP33

TIP33; RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltag e 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A ICM Collector Current-peak 15 A IB Base Current 3 A PC Collec tor Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Ts tg Storage Temperature .


INCHANGE TIP33

-65~150 ℃ THERMAL CHARACTERISTICS S YMBOL PARAMETER Rth j-c Thermal Resis tance,Junction to Case MAX UNIT 1.56 /W TIP33 isc Website:www.iscsemi. com 1 isc & iscsemi is registered trad emark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS VCEO(SUS) Collector- Emitter Sustaining Voltage.


INCHANGE TIP33

IC= 30mA; IB= 0 VCE(sat)-1 Collector-E mitter Saturation Voltage IC= 3A; IB= 0 .3A VCE(sat)-2 Collector-Emitter Satur ation Voltage IC= 10A; IB= 2.5A VBE(on )-1 Base-Emitter On Voltage IC= 3A; VC E= 4V VBE(on)-2 Base-Emitter On Voltag e IC= 10A; VCE= 4V ICEO Collector Cu toff Current VCE= 30V; IB= 0 ICES Co llector Cutoff Current VCE= 40V; VEB= 0 IEBO Emitter C.





Part

TIP33

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 40(Min) @IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Compl ement to Type TIP34 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for use in general purpose power amplifier and switching applicat ions. ABSOLUTE MAXIMUM.
Manufacture

INCHANGE

Datasheet
Download TIP33 Datasheet




 TIP33
isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@IC = 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Complement to Type TIP34
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current
3
A
PC
Collector Power Dissipation@ TC=25
80
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.56 /W
TIP33
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 TIP33
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(on)-1 Base-Emitter On Voltage
IC= 3A; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 10A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICES
Collector Cutoff Current
VCE= 40V; VEB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1.0MHz
TIP33
MIN MAX UNIT
40
V
1.0
V
4.0
V
1.6
V
3.0
V
0.7
mA
0.4
mA
1.0
mA
40
20
100
3
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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