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NPN Transistor. TIP33C Datasheet

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NPN Transistor. TIP33C Datasheet
















TIP33C Transistor. Datasheet pdf. Equivalent













Part

TIP33C

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 40(Min) @IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Comp lement to Type TIP34C ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS ·Designed for use in general purpos e power amplifier and switching applica tions. ABSOLUTE MAXIMU.
Manufacture

INCHANGE

Datasheet
Download TIP33C Datasheet


INCHANGE TIP33C

TIP33C; M RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag e 100 V VCEO Collector-Emitter Volt age 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuo us 10 A ICM Collector Current-peak 15 A IB Base Current 3 A PC Col lector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperatu.


INCHANGE TIP33C

re -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re sistance,Junction to Case MAX UNIT 1.5 6 ℃/W TIP33C isc Website:www.iscs emi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi stor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collec tor-Emitter Sustaining Vol.


INCHANGE TIP33C

tage IC= 30mA; IB= 0 VCE(sat)-1 Collect or-Emitter Saturation Voltage IC= 3A; I B= 0.3A VCE(sat)-2 Collector-Emitter S aturation Voltage IC= 10A; IB= 2.5A VB E(on)-1 Base-Emitter On Voltage IC= 3A ; VCE= 4V VBE(on)-2 Base-Emitter On Vo ltage IC= 10A; VCE= 4V ICEO Collecto r Cutoff Current VCE= 100V; IB= 0 ICE S Collector Cutoff Current VCE= 100V; VEB= 0 IEBO Emi.





Part

TIP33C

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 40(Min) @IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Comp lement to Type TIP34C ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS ·Designed for use in general purpos e power amplifier and switching applica tions. ABSOLUTE MAXIMU.
Manufacture

INCHANGE

Datasheet
Download TIP33C Datasheet




 TIP33C
isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@IC = 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·Complement to Type TIP34C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current
3
A
PC
Collector Power Dissipation@ TC=25
80
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.56 /W
TIP33C
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 TIP33C
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(on)-1 Base-Emitter On Voltage
IC= 3A; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 10A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
ICES
Collector Cutoff Current
VCE= 100V; VEB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1.0MHz
TIP33C
MIN MAX UNIT
100
V
1.0
V
4.0
V
1.6
V
3.0
V
0.7
mA
0.4
mA
1.0
mA
40
20
100
3
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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