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NPN Transistor. TIP35D Datasheet

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NPN Transistor. TIP35D Datasheet
















TIP35D Transistor. Datasheet pdf. Equivalent













Part

TIP35D

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 25(Min) @IC = 1.5A ·Collector-Emitter Sustaini ng Voltage- : VCEO(SUS)= 120V(Min) ·Co mplement to Type TIP36D ·Current Gain- Bandwidth Product- : fT= 3.0MHz(Min)@IC = 1.0A ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed for use in general purpo.
Manufacture

INCHANGE

Datasheet
Download TIP35D Datasheet


INCHANGE TIP35D

TIP35D; se power amplifier and switching applica tions. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) SYMBOL PARAMETER VALUE UNIT VC BO Collector-Base Voltage 160 V VCE O Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V IC Co llector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Ba se Current 5 A PC Collector Power D issipation@ TC=25℃ .


INCHANGE TIP35D

125 W Tj Junction Temperature 150 Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL P ARAMETER Rth j-c Thermal Resistance,Ju nction to Case MAX 1.0 UNIT ℃/W TI P35D isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECT RICAL CHARACTERISTICS TC=25℃ unless o therwise specified SYMBOL .


INCHANGE TIP35D

PARAMETER CONDITIONS VCEO(SUS) Collect or-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Sa turation Voltage IC= 15A; IB= 3A VCE(s at)-2 Collector-Emitter Saturation Volt age IC= 25A; IB= 6.25A VBE(on)-1 Base- Emitter On Voltage IC= 15A; VCE= 4V V BE(on)-2 Base-Emitter On Voltage IC= 2 5A; VCE= 4V ICEO Collector Cutoff Cur rent VCE= 90V; IB.





Part

TIP35D

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 25(Min) @IC = 1.5A ·Collector-Emitter Sustaini ng Voltage- : VCEO(SUS)= 120V(Min) ·Co mplement to Type TIP36D ·Current Gain- Bandwidth Product- : fT= 3.0MHz(Min)@IC = 1.0A ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed for use in general purpo.
Manufacture

INCHANGE

Datasheet
Download TIP35D Datasheet




 TIP35D
isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·Complement to Type TIP36D
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
5
A
PC
Collector Power Dissipation@ TC=25
125
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
/W
TIP35D
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 TIP35D
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 90V; IB= 0
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A; VCE= 4V
hFE-2
DC Current Gain
IC= 15A; VCE= 4V
TIP35D
MIN MAX UNIT
120
V
2.5
V
5.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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