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PNP Transistor. S9012 Datasheet

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PNP Transistor. S9012 Datasheet
















S9012 Transistor. Datasheet pdf. Equivalent













Part

S9012

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRIP TION ·Excellent hFE linearity ·Comple ment to NPN Type S9013 ·Minimum Lot-to -Lot variations for robust device perfo rmance and reliable operation APPLICATI ONS ·Power amplifier applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Volta ge VCEO Collector-Emitter Voltage VE BO Emitter-Base Voltage.
Manufacture

INCHANGE

Datasheet
Download S9012 Datasheet


INCHANGE S9012

S9012; IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storag e Temperature Range S9012 VALUE -40 - 25 -5 -500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website:www.iscsem i.com 1 isc & iscsemi is registered tr ademark isc Silicon PNP Power Transist or S9012 ELECTRICAL CHARACTERISTICS T C=25℃ unless otherwise spe.


INCHANGE S9012

cified SYMBOL PARAMETER CONDITIONS M IN TYP. MAX UNIT V(BR)CBO Collector-b ase breakdown voltage IC= -100μA , IE= 0 -40 V V(BR)CEO Collector-Emitter B reakdown Voltage IC= -1mA ; IB= 0 -25 V V(BR)EBO Emitter-base breakdown vol tage IE= -100μA , IC=0 -5 V VCE(sa t) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA -0.6 V VBE(sat ) Base-Emitter Satur.


INCHANGE S9012

ation Voltage IC= -500mA; IB= -50mA -1 .2 V ICBO Collector Cutoff Current V CB= -40V ; IE= 0 -0.1 μA ICEO Colle ctor cut-off current VCE=-20V , IE=0 -0.1 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 μA hFE-1 DC C urrent Gain IC=- 50mA ; VCE=-1V 64 4 00 fT Current-Gain—Bandwidth Produc t  hFE-1 Classifications Rank D E F VCE=-6V,IC=-20mA,f=.





Part

S9012

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRIP TION ·Excellent hFE linearity ·Comple ment to NPN Type S9013 ·Minimum Lot-to -Lot variations for robust device perfo rmance and reliable operation APPLICATI ONS ·Power amplifier applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Volta ge VCEO Collector-Emitter Voltage VE BO Emitter-Base Voltage.
Manufacture

INCHANGE

Datasheet
Download S9012 Datasheet




 S9012
isc Silicon PNP Power Transistor
DESCRIPTION
·Excellent hFE linearity
·Complement to NPN Type S9013
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
S9012
VALUE
-40
-25
-5
-500
625
150
-55~150
UNIT
V
V
V
mA
mW
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 S9012
isc Silicon PNP Power Transistor
S9012
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO
Collector-base breakdown voltage IC= -100μA , IE=0
-40
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
-25
V
V(BR)EBO Emitter-base breakdown voltage
IE= -100μA , IC=0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA
-0.6 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.2 V
ICBO
Collector Cutoff Current
VCB= -40V ; IE= 0
-0.1 μA
ICEO
Collector cut-off current
VCE=-20V , IE=0
-0.1 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.1 μA
hFE-1
DC Current Gain
IC=- 50mA ; VCE=-1V
64
400
fT
Current-Gain—Bandwidth Product
hFE-1 Classifications
Rank
D
E
F
VCE=-6V,IC=-20mA,f=30MHz
G
H
Range
64-91
78-112
96-135
112-166
144-202
150
I
190-300
MHz
J
300-400
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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