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PNP Transistor. TIP36D Datasheet

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PNP Transistor. TIP36D Datasheet
















TIP36D Transistor. Datasheet pdf. Equivalent













Part

TIP36D

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 25(Min) @IC = -1.5A ·Collector-Emitter Sustain ing Voltage- : VCEO(SUS)= -120V(Min) · Complement to Type TIP35D ·Current Gai n-Bandwidth Product- : fT= 3.0MHz(Min)@ IC= -1.0A ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Design ed for use in general pu.
Manufacture

INCHANGE

Datasheet
Download TIP36D Datasheet


INCHANGE TIP36D

TIP36D; rpose power amplifier and switching appl ications. ABSOLUTE MAXIMUM RATINGS (Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IB Base Current -5 A PC Collecto r Power Dissipation@.


INCHANGE TIP36D

TC=25℃ 125 W Tj Junction Temperat ure 150 ℃ Tstg Storage Temperatur e -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re sistance,Junction to Case MAX 1.0 UNI T ℃/W TIP36D isc website: www.isc semi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Trans istor ELECTRICAL CHARACTERISTICS TC=25 ℃ unless otherwise specified.


INCHANGE TIP36D

SYMBOL PARAMETER CONDITIONS VCEO(SU S) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector -Emitter Saturation Voltage IC= -15A; I B= -3A VCE(sat)-2 Collector-Emitter Sa turation Voltage IC= -25A; IB= -6.25A VBE(on)-1 Base-Emitter On Voltage IC= -15A; VCE= -4V VBE(on)-2 Base-Emitter On Voltage IC= -25A; VCE= -4V ICEO C ollector Cutoff Cu.





Part

TIP36D

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·DC Current Gain- : hFE= 25(Min) @IC = -1.5A ·Collector-Emitter Sustain ing Voltage- : VCEO(SUS)= -120V(Min) · Complement to Type TIP35D ·Current Gai n-Bandwidth Product- : fT= 3.0MHz(Min)@ IC= -1.0A ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Design ed for use in general pu.
Manufacture

INCHANGE

Datasheet
Download TIP36D Datasheet




 TIP36D
isc Silicon PNP Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = -1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min)
·Complement to Type TIP35D
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-25
A
ICM
Collector Current-peak
-40
A
IB
Base Current
-5
A
PC
Collector Power Dissipation@ TC=25
125
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
/W
TIP36D
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 TIP36D
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A; IB= -3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -6.25A
VBE(on)-1 Base-Emitter On Voltage
IC= -15A; VCE= -4V
VBE(on)-2 Base-Emitter On Voltage
IC= -25A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -90V; IB= 0
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5A; VCE= -4V
hFE-2
DC Current Gain
IC= -15A; VCE= -4V
TIP36D
MIN
MAX UNIT
-120
V
-2.5
V
-5.0
V
-2.0
V
-4.0
V
-1.0
mA
-0.7
mA
-1.0
mA
25
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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