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PNP Transistor. 2SB1373 Datasheet

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PNP Transistor. 2SB1373 Datasheet
















2SB1373 Transistor. Datasheet pdf. Equivalent













Part

2SB1373

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor 2SB137 3 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= -160V(Min) Wide Area of Safe Operation ·Compleme nt to Type 2SD2066 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for high power amplificatio ns. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SB1373 Datasheet


INCHANGE 2SB1373

2SB1373; E UNIT VCBO Collector-Base Voltage - 160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25 ℃ TJ Junction Temperature -20 A 120 W 2.5 150 ℃ Tstg Storage Temp erature Range -55~150 .


INCHANGE 2SB1373

℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1373 ELECTRICAL CHARACTERISTICS TC=25℃ un less otherwise specified SYMBOL PARAM ETER CONDITIONS VCE(sat) Collector-Em itter Saturation Voltage IC= -8A; IB= - 0.8A VBE(on) Base -Emitter On Voltage IC= -8A; VCE= -5V ICBO Collector Cut off Current VCB= -160V;.


INCHANGE 2SB1373

IE= 0 IEBO Emitter Cutoff Current VE B= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Curr ent Gain IC= -8A; VCE= -5V fT Curren t-Gain—Bandwidth Product IC= -0.5A; V CE= -5 V; f= 1MHz COB Output Capacita nce IE= 0; VCB= -10V; f= 1MHz MIN TYP . MAX UNIT -2.0 V -1.8 V -50 μA -5 0 μA 20 60 200 20.





Part

2SB1373

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor 2SB137 3 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= -160V(Min) Wide Area of Safe Operation ·Compleme nt to Type 2SD2066 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for high power amplificatio ns. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SB1373 Datasheet




 2SB1373
isc Silicon PNP Power Transistor
2SB1373
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SD2066
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-20
A
120
W
2.5
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1373
isc Silicon PNP Power Transistor
2SB1373
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A
VBE(on) Base -Emitter On Voltage
IC= -8A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -8A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
15
MHz
400
pF
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark




 2SB1373
isc Silicon PNP Power Transistor
2SB1373
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
3 isc & iscsemi is registered trademark




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