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PNP Transistor. 2SB1382 Datasheet

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PNP Transistor. 2SB1382 Datasheet
















2SB1382 Transistor. Datasheet pdf. Equivalent













Part

2SB1382

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Bre akdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Mi n.) @(IC= -8A, VCE= -4V) ·Low Collecto r Saturation Voltage- : VCE(sat)= -1.5V (Max)@ (IC= -8A, IB= -16mA) ·Complemen t to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operatio.
Manufacture

INCHANGE

Datasheet
Download 2SB1382 Datasheet


INCHANGE 2SB1382

2SB1382; n 2SB1382 APPLICATIONS ·Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR AMETER VALUE UNIT VCBO Collector-Bas e Voltage -120 V VCEO Collector-Emi tter Voltage -120 V VEBO Emitter-Ba se Voltage -6 V IC Collector Curren t-Continuous -16 A ICM Collector Cu rrent-Peak -26 A I.


INCHANGE 2SB1382

B Base Current-Continuous PC Collecto r Power Dissipation @TC=25℃ TJ Junc tion Temperature -1 A 75 W 150 Tstg Storage Temperature -55~150 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transisto r 2SB1382 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SY MBOL PARAMETER CONDITIONS .


INCHANGE 2SB1382

V(BR)CEO Collector-Emitter Breakdown Vo ltage IC= -10mA ; IB= 0 VCE(sat) Colle ctor-Emitter Saturation Voltage IC= -8A ; IB= -16mA VBE(sat) Base-Emitter Satu ration Voltage IC= -8A; IB= -16mA ICB O Collector Cutoff Current VCB= -120V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -8A ; VCE= -4V COB Output Capaci tance IE= 0; VCB=.





Part

2SB1382

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Bre akdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Mi n.) @(IC= -8A, VCE= -4V) ·Low Collecto r Saturation Voltage- : VCE(sat)= -1.5V (Max)@ (IC= -8A, IB= -16mA) ·Complemen t to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operatio.
Manufacture

INCHANGE

Datasheet
Download 2SB1382 Datasheet




 2SB1382
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High DC Current Gain-
: hFE= 2000( Min.) @(IC= -8A, VCE= -4V)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)
·Complement to Type 2SD2082
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
2SB1382
APPLICATIONS
·Designed for chopper regulator, DC motor driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-26
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-1
A
75
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1382
isc Silicon PNP Darlington Power Transistor
2SB1382
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A; IB= -16mA
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -8A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IE= 1A ; VCE= -12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= -40V, RL= 5Ω,
IC= -8A; IB1= -IB2= -16mA,
MIN TYP. MAX UNIT
-120
V
-1.5 V
-2.5 V
-10 μA
-10 mA
2000
350
pF
50
MHz
0.8
μs
1.8
μs
1.0
μs
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark




 2SB1382
isc Silicon PNP Darlington Power Transistor
2SB1382
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
3 isc & iscsemi is registered trademark




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