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PNP Transistor. 2SB1402 Datasheet

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PNP Transistor. 2SB1402 Datasheet
















2SB1402 Transistor. Datasheet pdf. Equivalent













Part

2SB1402

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor 2SB1402 DESCRIPTION ·Collector-E mitter Breakdown Voltage- : V(BR)CEO= - 120V(Min) ·High DC Current Gain- : hFE = 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Designed for low fre quency power amplifier applications. A BSOLUTE MAXIMUM RATING.
Manufacture

INCHANGE

Datasheet
Download 2SB1402 Datasheet


INCHANGE 2SB1402

2SB1402; S(Ta=25℃) SYMBOL PARAMETER VALUE UN IT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -1 20 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Colle ctor Power Dissipation @Ta=25℃ PC Col lector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2 W 25 1 50 ℃ Tstg Storage Tem.


INCHANGE 2SB1402

perature -55~150 ℃ isc website:www .iscsemi.cn 1 isc & iscsemi is registe red trademark isc Silicon PNP Darlingt on Power Transistor ELECTRICAL CHARACT ERISTICS Tj=25℃ unless otherwise spec ified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Vol tage IC= -25mA; RBE= ∞ V(BR)CBO Coll ector-Base Breakdown Voltage IC= -0.1m A; IE= 0 V(BR)EBO Emitter.


INCHANGE 2SB1402

-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturati on Voltage IC= -1.5A; IB= -3mA VCE(sat )-2 Collector-Emitter Saturation Voltag e IC= -3A; IB= -30mA VBE(sat)-1 Base-E mitter Saturation Voltage IC= -1.5A; I B= -3mA VBE(sat)-2 Base-Emitter Satura tion Voltage IC= -3A; IB= -30mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Colle.





Part

2SB1402

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor 2SB1402 DESCRIPTION ·Collector-E mitter Breakdown Voltage- : V(BR)CEO= - 120V(Min) ·High DC Current Gain- : hFE = 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Designed for low fre quency power amplifier applications. A BSOLUTE MAXIMUM RATING.
Manufacture

INCHANGE

Datasheet
Download 2SB1402 Datasheet




 2SB1402
isc Silicon PNP Darlington Power Transistor
2SB1402
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A)
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-6
A
2
W
25
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1402
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -1.5A; IB= -3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -3A; IB= -30mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE=
hFE
DC Current Gain
IC= -1.5A; VCE= -3V
2SB1402
MIN TYP. MAX UNIT
-120
V
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-10
μA
-10
μA
1000
20000
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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