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PNP Transistor. 2SB1507 Datasheet

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PNP Transistor. 2SB1507 Datasheet
















2SB1507 Transistor. Datasheet pdf. Equivalent













Part

2SB1507

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Goo d Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Designed for rela y drivers,high-speed inverters,converte rs. ABSOLUTE MAXIMUM RA.
Manufacture

INCHANGE

Datasheet
Download 2SB1507 Datasheet


INCHANGE 2SB1507

2SB1507; TINGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage - 6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Co llector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 3 W 40 150 ℃ Tstg Stora.


INCHANGE 2SB1507

ge Temperature Range -55~150 ℃ 2SB1 507 isc website:www.iscsemi.cn 1 is c & iscsemi is registered trademark is c Silicon PNP Power Transistor 2SB1507 ELECTRICAL CHARACTERISTICS TC=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS V(BR)CEO Collector-E mitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1m A; IE= 0.


INCHANGE 2SB1507

V(BR)EBO Emitter-Base Breakdown Voltag e IE= -1m A; IC= 0 VCE(sat) Collector -Emitter Saturation Voltage IC= -4A; IB = -0.4A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutof f Current VEB= -4V; IC= 0 hFE-1 DC C urrent Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -5A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V Switc.





Part

2SB1507

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Goo d Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Designed for rela y drivers,high-speed inverters,converte rs. ABSOLUTE MAXIMUM RA.
Manufacture

INCHANGE

Datasheet
Download 2SB1507 Datasheet




 2SB1507
isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD2280
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers,high-speed inverters,converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-20
A
3
W
40
150
Tstg
Storage Temperature Range
-55~150
2SB1507
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1507
isc Silicon PNP Power Transistor
2SB1507
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1m A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2A; RL= 10Ω,
IB1= -IB2= -0.2A, VCC= -20V
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
MIN TYP. MAX UNIT
-50
V
-60
V
-6
V
-0.4 V
-100 μA
-100 μA
70
280
30
10
MHz
0.2
μs
0.7
μs
0.1
μs
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark




 2SB1507
isc Silicon PNP Power Transistor
2SB1507
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
3 isc & iscsemi is registered trademark




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