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PNP Transistor. 2SB1530 Datasheet

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PNP Transistor. 2SB1530 Datasheet
















2SB1530 Transistor. Datasheet pdf. Equivalent













Part

2SB1530

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= -150V(Min.) ·Complem ent to Type 2SD2337 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for low frequency power am plifier color TV vertical deflection ou tput applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SB1530 Datasheet


INCHANGE 2SB1530

2SB1530; PARAMETER VALUE UNIT VCBO Collector -Base Voltage -200 V VCEO Collector -Emitter Voltage -150 V VEBO Emitte r-Base Voltage -6 V IC Collector Cu rrent-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power D issipation PC Collector Power Dissipati on @ TC=25℃ TJ Junction Temperature 1.5 W 20 150 ℃ Tstg Storage Tem perature Range -45~15.


INCHANGE 2SB1530

0 ℃ 2SB1530 isc website:www.iscse mi.cn 1 isc & iscsemi is registered tr ademark isc Silicon PNP Power Transist or 2SB1530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S YMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Br eakdown Voltage IC= -10mA; RBE= ∞ -1 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 .


INCHANGE 2SB1530

-6 V VCE(sat) Collector-Emitter Satura tion Voltage IC= -0.5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC = -50mA; VCE= -4V -1.0 V ICBO Collec tor Cutoff Current VCB= -120V; IE= 0 -1 μA hFE-1 DC Current Gain IC= -50 mA; VCE= -4V 60 200 hFE-2 DC Curren t Gain Notes: ◆hFE-1 Classifications B C IC= -0.5A; VCE= -10V 60 60-12 0 100-200 ◆hFE-1 Puls.





Part

2SB1530

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= -150V(Min.) ·Complem ent to Type 2SD2337 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for low frequency power am plifier color TV vertical deflection ou tput applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SB1530 Datasheet




 2SB1530
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Complement to Type 2SD2337
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier color TV
vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
Collector Power Dissipation
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
W
20
150
Tstg
Storage Temperature Range
-45~150
2SB1530
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1530
isc Silicon PNP Power Transistor
2SB1530
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞
-150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-3.0 V
VBE(on) Base-Emitter On Voltage
IC= -50mA; VCE= -4V
-1.0 V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1 μA
hFE-1
DC Current Gain
IC= -50mA; VCE= -4V
60
200
hFE-2
DC Current Gain
Notes:
hFE-1 Classifications
B
C
IC= -0.5A; VCE= -10V
60
60-120 100-200
hFE-1 Pulse test
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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