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PNP Transistor. 2SB1558 Datasheet

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PNP Transistor. 2SB1558 Datasheet
















2SB1558 Transistor. Datasheet pdf. Equivalent













Part

2SB1558

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·High DC Current Gain - : hFE= 5000(Min)@IC= -7A ·Low-Collec tor Saturation Voltage- : VCE(sat)= -2. 5V(Max.)@IC= -7A ·Complement to Type 2 SD2387 ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed f or power amplifier applications. ABSOL UTE MAXIMUM RATINGS(Ta=.
Manufacture

INCHANGE

Datasheet
Download 2SB1558 Datasheet


INCHANGE 2SB1558

2SB1558; 25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -8 A IB Base Current- Continuous PC Coll ector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 80 W 150 ℃ Tstg Storage Temperature Ran ge -55~150 ℃ 2SB1558 .


INCHANGE 2SB1558

isc website:www.iscsemi.cn 1 isc & i scsemi is registered trademark isc Sil icon PNP Darlington Power Transistor 2 SB1558 ELECTRICAL CHARACTERISTICS TC=2 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Colle ctor-Emitter Breakdown Voltage IC= -50m A; IB= 0 VCE(sat) Collector-Emitter Sa turation Voltage IC= -7A; IB= -7mA VBE (on) Base-Emitter On V.


INCHANGE 2SB1558

oltage IC= -7A; VCE= -5V ICBO Collect or Cutoff Current VCB= -140V; IE= 0 h FE-1 DC Current Gain IC= -7A; VCE= -5 V hFE-2 DC Current Gain IC= -12A; VC E= -5V COB Collector Output Capacitan ce IE= 0; VCB= -10V; f= 1MHz fT Curr ent-Gain—Bandwidth Product IC= -1A; V CE= -5V MIN TYP. MAX UNIT -140 V -2 .5 V -3.0 V -5.0 μA 5000 30000 2000 170 pF 30 MH.





Part

2SB1558

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·High DC Current Gain - : hFE= 5000(Min)@IC= -7A ·Low-Collec tor Saturation Voltage- : VCE(sat)= -2. 5V(Max.)@IC= -7A ·Complement to Type 2 SD2387 ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed f or power amplifier applications. ABSOL UTE MAXIMUM RATINGS(Ta=.
Manufacture

INCHANGE

Datasheet
Download 2SB1558 Datasheet




 2SB1558
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
·Complement to Type 2SD2387
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-0.1
A
80
W
150
Tstg
Storage Temperature Range
-55~150
2SB1558
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1558
isc Silicon PNP Darlington Power Transistor
2SB1558
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA
VBE(on) Base-Emitter On Voltage
IC= -7A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
hFE-1
DC Current Gain
IC= -7A; VCE= -5V
hFE-2
DC Current Gain
IC= -12A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-5.0 μA
5000
30000
2000
170
pF
30
MHz
hFE-1 Classifications
A
B
C
5000-12000 9000-18000 15000-30000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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