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PNP Transistor. 2SB1560 Datasheet

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PNP Transistor. 2SB1560 Datasheet
















2SB1560 Transistor. Datasheet pdf. Equivalent













Part

2SB1560

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·High DC Current Gain - : hFE= 5000(Min)@IC= -7A ·Low-Collec tor Saturation Voltage- : VCE(sat)= -2. 5V(Max.)@IC= -7A ·Complement to Type 2 SD2390 ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed f or audio, series regulator and general purpose applications. .
Manufacture

INCHANGE

Datasheet
Download 2SB1560 Datasheet


INCHANGE 2SB1560

2SB1560; ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE UNIT VCBO Colle ctor-Base Voltage -160 V VCEO Colle ctor-Emitter Voltage -150 V VEBO Em itter-Base Voltage -5 V IC Collecto r Current-Continuous -10 A IB Base Current- Continuous PC Collector Powe r Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ T stg Storage Temperature.


INCHANGE 2SB1560

Range -55~150 ℃ 2SB1560 isc websi te:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1560 E LECTRICAL CHARACTERISTICS TC=25℃ unle ss otherwise specified SYMBOL PARAMET ER CONDITIONS V(BR)CEO Collector-Emit ter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7m.


INCHANGE 2SB1560

A VBE(sat) Base-Emitter Saturation Volt age IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEB O Emitter Cutoff Current VEB= -5V; IC = 0 hFE DC Current Gain IC= -7A; VCE = -4V COB Collector Output Capacitanc e IE= 0; VCB= -10V; f= 1MHz Switching Times ton Turn-on Time tstg Storag e Time tf Fall Time IC= -7A; IB1= -I B2= -7mA, VCC= -70.





Part

2SB1560

Description

PNP Transistor



Feature


isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·High DC Current Gain - : hFE= 5000(Min)@IC= -7A ·Low-Collec tor Saturation Voltage- : VCE(sat)= -2. 5V(Max.)@IC= -7A ·Complement to Type 2 SD2390 ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed f or audio, series regulator and general purpose applications. .
Manufacture

INCHANGE

Datasheet
Download 2SB1560 Datasheet




 2SB1560
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
·Complement to Type 2SD2390
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-1
A
100
W
150
Tstg
Storage Temperature Range
-55~150
2SB1560
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1560
isc Silicon PNP Darlington Power Transistor
2SB1560
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -7A; IB= -7mA
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -7A; VCE= -4V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -7A; IB1= -IB2= -7mA,
VCC= -70V, RL= 10Ω
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 μA
-100 μA
5000
30000
230
pF
0.8
μs
3.0
μs
1.2
μs
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark




 2SB1560
isc Silicon PNP Darlington Power Transistor
2SB1560
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
3 isc & iscsemi is registered trademark




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