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PNP Transistor. 2SB1569 Datasheet

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PNP Transistor. 2SB1569 Datasheet
















2SB1569 Transistor. Datasheet pdf. Equivalent













Part

2SB1569

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= -120V(Min) ·Compleme nt to Type 2SD2400 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for power amplifier applicat ions. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.
Manufacture

INCHANGE

Datasheet
Download 2SB1569 Datasheet


INCHANGE 2SB1569

2SB1569; -120 V VCEO Collector-Emitter Volta ge -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuo us -1.5 A ICM Collector Current-Pea k Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 ℃ TJ Junction Temperature -3.0 A 2 W 20 150 ℃ Tstg Storage Temper ature -55~150 ℃ 2SB1569 isc websit e:www.iscsemi.cn 1 isc & .


INCHANGE 2SB1569

iscsemi is registered trademark isc Sil icon PNP Power Transistor 2SB1569 ELE CTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)C EO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -120 V V(BR)CBO Coll ector-Base Breakdown Voltage IC= -50μ A; IE= 0 -120 V V(BR)EBO Emitter-Bas e Breakdown Voltage .


INCHANGE 2SB1569

IE= -50μA; IC= 0 -5 V VCE(sat) Colle ctor-Emitter Saturation Voltage IC= -1A ; IB= -0.1A -2.0 V VBE(sat) Base-Emit ter Saturation Voltage IC= -1A; IB= -0 .1A -1.5 V ICBO Collector Cutoff Cur rent VCB= -120V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 μA hFE DC Current Gain IC= -1A; VCE= -5V 100 200 fT Current-G ain—Bandwidth Product.





Part

2SB1569

Description

PNP Transistor



Feature


isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= -120V(Min) ·Compleme nt to Type 2SD2400 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Designed for power amplifier applicat ions. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.
Manufacture

INCHANGE

Datasheet
Download 2SB1569 Datasheet




 2SB1569
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2400
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-3.0
A
2
W
20
150
Tstg
Storage Temperature
-55~150
2SB1569
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SB1569
isc Silicon PNP Power Transistor
2SB1569
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
-120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
-120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
-2.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
-1.5 V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-1.0 μA
hFE
DC Current Gain
IC= -1A; VCE= -5V
100
200
fT
Current-Gain—Bandwidth Product
IC= -0.1A;VCE= -5V; ftest= 30MHz
50
MHz
COB
Collector Output Capacitance
IE= 0; VCE= -10V; ftest= 1MHz
30
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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