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NPN Transistor. 2SC937 Datasheet

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NPN Transistor. 2SC937 Datasheet
















2SC937 Transistor. Datasheet pdf. Equivalent













Part

2SC937

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1200V(Min) ·High Reliability ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation A PPLICATIONS ·Designed for TV horizonta l deflection output applications. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 1200 V .
Manufacture

INCHANGE

Datasheet
Download 2SC937 Datasheet


INCHANGE 2SC937

2SC937; VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse PC Coll ector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 22 W 12 5 ℃ Tstg Storage Temperature Range -45~125 ℃ 2SC937 isc website:w ww.iscsemi.cn 1 isc & iscsemi is regis tered trademark isc Silic.


INCHANGE 2SC937

on NPN Power Transistor 2SC937 ELECTRI CAL CHARACTERISTICS TC=25℃ unless oth erwise specified SYMBOL PARAMETER CO NDITIONS MIN TYP. MAX UNIT V(BR)CEO C ollector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V VCE(sat) Collec tor-Emitter Saturation Voltage IC= 2.5A ; IB= 0.8A 5.0 V VBE(sat) Base-Emitt er Saturation Voltage IC= 2.5A; IB= 0. 8A 1.8 V ICBX Coll.


INCHANGE 2SC937

ector Cutoff Current VCB= 1200V; VEB= 1 .5V 1 mA IEBO Emitter Cutoff Curren t tf Fall Time VEB= 6V; IC= 0 IC= 2. 5A, IB1= 0.8A, IB2= -1.1A; LB= 10μH 0 .2 mA 1.2 μs Notice: ISC reserves t he rights to make changes of the conten t herein the datasheet at any time with out notification. The information conta ined herein is presented only as a guid e for the applications.





Part

2SC937

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1200V(Min) ·High Reliability ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation A PPLICATIONS ·Designed for TV horizonta l deflection output applications. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 1200 V .
Manufacture

INCHANGE

Datasheet
Download 2SC937 Datasheet




 2SC937
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1200V(Min)
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC= 25
TJ
Junction Temperature
6
A
22
W
125
Tstg
Storage Temperature Range
-45~125
2SC937
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SC937
isc Silicon NPN Power Transistor
2SC937
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
1.8
V
ICBX
Collector Cutoff Current
VCB= 1200V; VEB= 1.5V
1
mA
IEBO
Emitter Cutoff Current
tf
Fall Time
VEB= 6V; IC= 0
IC= 2.5A, IB1= 0.8A, IB2= -1.1A;
LB= 10μH
0.2 mA
1.2 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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