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NPN Transistor. 2SC2167 Datasheet

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NPN Transistor. 2SC2167 Datasheet
















2SC2167 Transistor. Datasheet pdf. Equivalent













Part

2SC2167

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC216 7 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 150V(Min) · DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot var iations for robust device performance a nd reliable operation APPLICATIONS ·D esigned for TV vertical output ,audio o utput driver and general purpose applic ations. ABSOLUTE MAXI.
Manufacture

INCHANGE

Datasheet
Download 2SC2167 Datasheet


INCHANGE 2SC2167

2SC2167; MUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt age 150 V VCEO Collector-Emitter Vo ltage 150 V VEBO Emitter-Base Volta ge 6 V IC Collector Current-Continu ous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25 ℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperatur e -55~150 ℃ isc websi.


INCHANGE 2SC2167

te:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN P ower Transistor 2SC2167 ELECTRICAL CH ARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO NS MIN TYP. MAX UNIT V(BR)CEO Collect or-Emitter Breakdown Voltage IC= 25mA; IB= 0 150 V VCE(sat) Collector-Emitt er Saturation Voltage IC= 0.7A; IB= 0.0 7A 1.0 V ICBO Coll.


INCHANGE 2SC2167

ector Cutoff Current VCB= 150V; IE= 0 10 μA IEBO Emitter Cutoff Current V EB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.7A; VCE= 10V 60 COB Outp ut Capacitance IE= 0; VCB= 10V; f= 1MH z 35 pF fT Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 15 MHz Switching Times ton Turn-On Time t stg Storage Time IC= 1A; IB1= -IB2= 0 .1A; VCC= 20V; RL= 20Ω.





Part

2SC2167

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC216 7 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 150V(Min) · DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot var iations for robust device performance a nd reliable operation APPLICATIONS ·D esigned for TV vertical output ,audio o utput driver and general purpose applic ations. ABSOLUTE MAXI.
Manufacture

INCHANGE

Datasheet
Download 2SC2167 Datasheet




 2SC2167
isc Silicon NPN Power Transistor
2SC2167
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·DC Current Gain-
: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1
A
30
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SC2167
isc Silicon NPN Power Transistor
2SC2167
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A
1.0
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10 μA
hFE
DC Current Gain
IC= 0.7A; VCE= 10V
60
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
35
pF
fT
Current-Gain—Bandwidth Product
IE= -0.2A ; VCE= 12V
15
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
IC= 1A; IB1= -IB2= 0.1A;
VCC= 20V; RL= 20Ω
1.0
μs
3.0
μs
tf
Fall Time
1.5
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark








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