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NPN Transistor. 2SC2292 Datasheet

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NPN Transistor. 2SC2292 Datasheet
















2SC2292 Transistor. Datasheet pdf. Equivalent













Part

2SC2292

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC229 2 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Power switching ·Power am plification ·Power driver ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL PARAME TER MAX UNIT VCBO Coll.
Manufacture

INCHANGE

Datasheet
Download 2SC2292 Datasheet


INCHANGE 2SC2292

2SC2292; ector-Base Voltage 500 V VCEO Collec tor-Emitter Voltage 400 V VEBO Emit ter-Base Voltage 7 V IC Collector C urrent-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current- Continuous 4 A IBM Base Current-Pea k PC Collector Power Dissipation @TC= 25℃ Tj Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperat ure Range -55~150 ℃ .


INCHANGE 2SC2292

THERMAL CHARACTERISTICS SYMBOL PARAMET ER MAX UNIT Rth j-c Thermal Resistanc e,Junction to Case 1.56 ℃/W isc webs ite:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NP N Power Transistor ELECTRICAL CHARACTE RISTICS TC=25℃ unless otherwise speci fied SYMBOL PARAMETER CONDITIONS VC EO(SUS) Collector-Emitter Sustainig Vol tage IC= 50mA; IB= 0 VC.


INCHANGE 2SC2292

E(sat) Collector-Emitter Saturation Volt age IC= 4A; IB= 0.4A VBE(sat) Base-Emi tter Saturation Voltage IC= 4A; IB= 0. 4A hFE-1 DC Current Gain IC= 4A; VCE = 2V hFE-2 DC Current Gain IC= 8A; V CE= 2V ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICEO Collector Cuto ff Current VCE= 400V; IB= 0 IEBO Emi tter Cutoff Current VEB= 7V; IC= 0 fT Current-Gain—Ban.





Part

2SC2292

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC229 2 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Power switching ·Power am plification ·Power driver ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL PARAME TER MAX UNIT VCBO Coll.
Manufacture

INCHANGE

Datasheet
Download 2SC2292 Datasheet




 2SC2292
isc Silicon NPN Power Transistor
2SC2292
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
8
A
80
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.56 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC2292
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
hFE-1
DC Current Gain
IC= 4A; VCE= 2V
hFE-2
DC Current Gain
IC= 8A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC=4A; IB1=- IB2= 0.8A;
RL= 5Ω; VBB2= 4V
2SC2292
MIN TYP. MAX UNIT
410
V
0.7
V
1.5
V
15
8
0.1 mA
0.1 mA
1.0 mA
20
MHz
1.0 μs
3.0 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2SC2292
isc Silicon NPN Power Transistor
2SC2292
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark




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