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NPN Transistor. 2SC2331 Datasheet

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NPN Transistor. 2SC2331 Datasheet
















2SC2331 Transistor. Datasheet pdf. Equivalent













Part

2SC2331

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC233 1 DESCRIPTION ·Low Collector Saturati on Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Fast Switching Speed ·Complement to Type 2SA1008 ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in devices such as switching regulators, DC/DC co nverters, and high-freq.
Manufacture

INCHANGE

Datasheet
Download 2SC2331 Datasheet


INCHANGE 2SC2331

2SC2331; uency power amplifiers. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta ge 150 V VCEO Collector-Emitter Volt age 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continu ous 2.0 A ICM Collector Current-Pea k 4.0 A IB Base Current-Continuous 1.0 A Collector Power Dissipation@ T a=25℃ 1.5 PC W C.


INCHANGE 2SC2331

ollector Power Dissipation@ TC=25℃ 15 TJ Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC23 31 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA RAMETER CONDITIONS MIN MAX UNIT VCE O(SUS) Collector-Emitter Sus.


INCHANGE 2SC2331

taining Voltage IC= 50mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VBE(s at) Base-Emitter Saturation Voltage IC = 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 A ICER Collector Cutoff Current ICE X Collector Cutoff Current IEBO Emit ter Cutoff Current VCE= 100V ; RBE= 51 Ω,Ta=125℃ VCE= 100V.





Part

2SC2331

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC233 1 DESCRIPTION ·Low Collector Saturati on Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Fast Switching Speed ·Complement to Type 2SA1008 ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in devices such as switching regulators, DC/DC co nverters, and high-freq.
Manufacture

INCHANGE

Datasheet
Download 2SC2331 Datasheet




 2SC2331
isc Silicon NPN Power Transistor
2SC2331
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.)@ IC= 1A
·Fast Switching Speed
·Complement to Type 2SA1008
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
4.0
A
IB
Base Current-Continuous
1.0
A
Collector Power Dissipation@ Ta=25
1.5
PC
W
Collector Power Dissipation@ TC=25
15
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC2331
isc Silicon NPN Power Transistor
2SC2331
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
0.6
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10 μA
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V ; RBE= 51Ω,Ta=125
VCE= 100V;VBE(off)= -1.5V
VCE= 100V;VBE(off)= -1.5V,Ta=125
VEB= 5.0V; IC= 0
1.0 mA
10 μA
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
40
hFE-2
DC Current Gain
IC= 1.0A; VCE= 5V
40
200
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
100
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
pF
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 1.0A ,RL= 50Ω,
IB1= -IB2= 0.1A, VCC50V
0.5 μs
1.5 μs
0.5 μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2SC2331
isc Silicon NPN Power Transistor
2SC2331
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark




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