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NPN Transistor. 2SC2440 Datasheet

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NPN Transistor. 2SC2440 Datasheet
















2SC2440 Transistor. Datasheet pdf. Equivalent













Part

2SC2440

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC244 0 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400(V) (Min.) ·High Switching Speed ·High Re liability ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Switch ing regulators ·Ultrasonic generators ·High frequency inverters ·General pu rpose power amplifiers AB.
Manufacture

INCHANGE

Datasheet
Download 2SC2440 Datasheet


INCHANGE 2SC2440

2SC2440; SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 450 V VCEO Collector- Emitter Voltage 400 V VEBO Emitter- Base Voltage 7 V IC Collector Curre nt-Continuous 5 A IB Base Collector Current-Continuous PC Total Power Di ssipation @ TC=25℃ TJ Junction Temp erature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Ran.


INCHANGE 2SC2440

ge -45~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re sistance, Junction to Case MAX 3.0 UN IT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered tradema rk isc Silicon NPN Power Transistor 2 SC2440 ELECTRICAL CHARACTERISTICS TC=2 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX U NIT V(BR)CEO Collector-Em.


INCHANGE 2SC2440

itter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)CBO Collector-Base Breakd own Voltage IC= 0.1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Coll ector-Emitter Saturation Voltage IC= 2A ; IB= 0.4A 0.8 V VBE(sat) Base-Emitt er Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Curren t VCB= 400V; IE= .





Part

2SC2440

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC244 0 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400(V) (Min.) ·High Switching Speed ·High Re liability ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Switch ing regulators ·Ultrasonic generators ·High frequency inverters ·General pu rpose power amplifiers AB.
Manufacture

INCHANGE

Datasheet
Download 2SC2440 Datasheet




 2SC2440
isc Silicon NPN Power Transistor
2SC2440
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 400(V)(Min.)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
40
W
150
Tstg
Storage Temperature Range
-45~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
3.0
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC2440
isc Silicon NPN Power Transistor
2SC2440
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
0.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
hFE
DC Current Gain
IC= 2A; VCE= 5V
15
Switching Times
ton
Turn-On Time
1.5 μs
tstg
Storage Time
IC= 3A;IB1= -IB2= 0.3A;RL= 20Ω
4.0 μs
tf
Fall Time
1.3 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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