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NPN Transistor. 2SC3157 Datasheet

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NPN Transistor. 2SC3157 Datasheet
















2SC3157 Transistor. Datasheet pdf. Equivalent













Part

2SC3157

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC315 7 DESCRIPTION ·Low Collector Saturati on Voltage- : VCE(sat)= 0.6V(Max.)@IC= 5A ·Fast Switching Speed ·Complement to Type 2SA1261 ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS ·D eveloped for high-voltage high-speed sw itching, and is ideal for use as a driv er in devices such as s.
Manufacture

INCHANGE

Datasheet
Download 2SC3157 Datasheet


INCHANGE 2SC3157

2SC3157; witching reglators, DC/DC converters, an d high frequency power amplifiers. ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 150 V VCEO Collector- Emitter Voltage 100 V VEBO Emitter- Base Voltage 7.0 V IC Collector Cur rent-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-C ontinuous Collector.


INCHANGE 2SC3157

Power Dissipation @ Ta=25℃ PC Collect or Power Dissipation @ TC=25℃ TJ Ju nction Temperature 3.5 A 1.5 W 60 1 50 ℃ Tstg Storage Temperature Rang e -55~150 ℃ isc website:www.iscse mi.com 1 isc & iscsemi is registered t rademark isc Silicon NPN Power Transis tor 2SC3157 ELECTRICAL CHARACTERISTIC S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS .


INCHANGE 2SC3157

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Colle ctor-Emitter Saturation Voltage IC= 5.0 A; IB= 0.5A VBE(sat) Base-Emitter Satu ration Voltage IC= 5.0A; IB= 0.5A ICB O Collector Cutoff Current ICEX Coll ector Cutoff Current IEBO Emitter Cut off Current VCB= 100V; IE= 0 VCE= 100V ; VBE(off)= -1.5V VCE= 100V; VBE(off)= -1.5V, Ta=125℃ VEB.





Part

2SC3157

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC315 7 DESCRIPTION ·Low Collector Saturati on Voltage- : VCE(sat)= 0.6V(Max.)@IC= 5A ·Fast Switching Speed ·Complement to Type 2SA1261 ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS ·D eveloped for high-voltage high-speed sw itching, and is ideal for use as a driv er in devices such as s.
Manufacture

INCHANGE

Datasheet
Download 2SC3157 Datasheet




 2SC3157
isc Silicon NPN Power Transistor
2SC3157
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.)@IC= 5A
·Fast Switching Speed
·Complement to Type 2SA1261
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Developed for high-voltage high-speed switching, and is
ideal for use as a driver in devices such as switching reg-
lators, DC/DC converters, and high frequency power am-
plifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3.5
A
1.5
W
60
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3157
isc Silicon NPN Power Transistor
2SC3157
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 100V; IE= 0
VCE= 100V; VBE(off)= -1.5V
VCE= 100V; VBE(off)= -1.5V, Ta=125
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3.0A; VCE= 5V
hFE-3
DC Current Gain
IC= 5.0A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5.0A, RL= 10Ω,
IB1= -IB2= 0.5A, VCC50V
MIN MAX UNIT
100
V
0.6
V
1.5
V
10
μA
10
μA
1.0
mA
10
μA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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