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NPN Transistor. 2SC3170 Datasheet

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NPN Transistor. 2SC3170 Datasheet
















2SC3170 Transistor. Datasheet pdf. Equivalent













Part

2SC3170

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emiiter Sustaining Vo ltage- : VCEO(SUS)= 400V(Min.) ·Low Co llector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switchi ng ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h igh speed switching applications. ABSO LUTE MAXIMUM RATINGS (T.
Manufacture

INCHANGE

Datasheet
Download 2SC3170 Datasheet


INCHANGE 2SC3170

2SC3170; a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A I CM Collector Current-Peak Collector P ower Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junct ion Temperature 15 A 2 W 40 150 Tstg Storage Temperatu.


INCHANGE 2SC3170

re Range -55~150 ℃ 2SC3170 · isc w ebsite:www.iscsemi.com 1 isc & iscse mi is registered trademark isc Silicon NPN Power Transistor 2SC3170 ELECTRI CAL CHARACTERISTICS TC=25℃ unless oth erwise specified SYMBOL PARAMETER CO NDITIONS VCEO(SUS) Collector-Emitter S ustaining Voltage IC=20mA; IB= VCE(sat ) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat.


INCHANGE 2SC3170

) Base-Emitter Saturation Voltage IC= 3 A; IB= 0.6A ICBO Collector Cutoff Cur rent VCB= 500V; IE= 0 IEBO Emitter C utoff Current VEB= 5V; IC= 0 hFE-1 D C Current Gain IC= 0.1A; VCE= 5V hFE- 2 DC Current Gain IC= 3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching Times; Resist ive Load ton Turn-on Time ts Storag e Time tf Fall Tim.





Part

2SC3170

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emiiter Sustaining Vo ltage- : VCEO(SUS)= 400V(Min.) ·Low Co llector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switchi ng ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h igh speed switching applications. ABSO LUTE MAXIMUM RATINGS (T.
Manufacture

INCHANGE

Datasheet
Download 2SC3170 Datasheet




 2SC3170
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
15
A
2
W
40
150
Tstg
Storage Temperature Range
-55~150
2SC3170
·
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3170
isc Silicon NPN Power Transistor
2SC3170
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=20mA; IB=
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 3A; IB1= -IB2= 0.6A;
VCC= 100V
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
8
MHz
1.0 μs
3.0 μs
1.0 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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