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NPN Transistor. 2SC3181 Datasheet

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NPN Transistor. 2SC3181 Datasheet
















2SC3181 Transistor. Datasheet pdf. Equivalent













Part

2SC3181

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e- : VCE(sat)= 2.0V(Max.) @IC= 6A ·Goo d Linearity of hFE ·Complement to Type 2SA1264 ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation APPLICATIONS ·Power am plifier applications ·Recommend for 55 W high fidelity audio frequency amplifi er output stage applicat.
Manufacture

INCHANGE

Datasheet
Download 2SC3181 Datasheet


INCHANGE 2SC3181

2SC3181; ions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Colle ctor Current-Continuous 8 A IB Base Current-Continuous PC Collector Powe r Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 80 W 150 ℃ T stg Storage Temperature.


INCHANGE 2SC3181

Range -55~150 ℃ 2SC3181 isc websit e:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3181 ELECTRICAL C HARACTERISTICS TC=25℃ unless otherwis e specified SYMBOL PARAMETER CONDITI ONS MIN TYP. MAX UNIT V(BR)CEO Collec tor-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V VCE(sat) Collector-Emit ter Saturation Voltage I.


INCHANGE 2SC3181

C= 6A; IB= 0.6A 2.0 V VBE(on) Base-E mitter On Voltage IC= 4A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VC B= 120V; IE= 0 5 μA IEBO Emitter Cu toff Current VEB= 5V; IC= 0 5 μA hF E-1 DC Current Gain IC= 1A; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 190 p F fT Current-Gain—.





Part

2SC3181

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e- : VCE(sat)= 2.0V(Max.) @IC= 6A ·Goo d Linearity of hFE ·Complement to Type 2SA1264 ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation APPLICATIONS ·Power am plifier applications ·Recommend for 55 W high fidelity audio frequency amplifi er output stage applicat.
Manufacture

INCHANGE

Datasheet
Download 2SC3181 Datasheet




 2SC3181
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @IC= 6A
·Good Linearity of hFE
·Complement to Type 2SA1264
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.8
A
80
W
150
Tstg
Storage Temperature Range
-55~150
2SC3181
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3181
isc Silicon NPN Power Transistor
2SC3181
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
5 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
35
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
190
pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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