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NPN Transistor. 2SC3212 Datasheet

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NPN Transistor. 2SC3212 Datasheet
















2SC3212 Transistor. Datasheet pdf. Equivalent













Part

2SC3212

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · ·Collector-Emiiter Sustaini ng Voltage- : VCEO(SUS)= 500V(Min.) Low Collector Saturation Voltage : VC E(sat)= 1.0V(Max.)@ IC= 5A ·High Spee d Switching ·Minimum Lot-to-Lot varia tions for robust device performance an d reliable operation APPLICATIONS ·De signed for high speed switching applica tions. ABSOLUTE MAXIMUM.
Manufacture

INCHANGE

Datasheet
Download 2SC3212 Datasheet


INCHANGE 2SC3212

2SC3212; RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta ge 800 V VCEO Collector-Emitter Vol tage 500 V VEBO Emitter-Base Voltag e 8 V IC Collector Current-Continuo us 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Col lector Power Dissipation @Ta=25℃ PC C ollector Power Dissipation @TC=25℃ T j Junction Temperature .


INCHANGE 2SC3212

4 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3212 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICA L CHARACTERISTICS TC=25℃ unless other wise specified SYMBOL PARAMETER COND ITIONS VCEO(SUS) Collector-Emitter Sus taining Voltage IC= 30mA; IB=0 VCE(sat ) Collector-Emitter Satura.


INCHANGE 2SC3212

tion Voltage IC= 5A; IB= 1A VBE(sat) Ba se-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Cur rent Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V fT Cur rent-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching Times; Resistive L oad ton Turn-on Ti.





Part

2SC3212

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · ·Collector-Emiiter Sustaini ng Voltage- : VCEO(SUS)= 500V(Min.) Low Collector Saturation Voltage : VC E(sat)= 1.0V(Max.)@ IC= 5A ·High Spee d Switching ·Minimum Lot-to-Lot varia tions for robust device performance an d reliable operation APPLICATIONS ·De signed for high speed switching applica tions. ABSOLUTE MAXIMUM.
Manufacture

INCHANGE

Datasheet
Download 2SC3212 Datasheet




 2SC3212
isc Silicon NPN Power Transistor
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 5A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
3
W
100
150
Tstg
Storage Temperature Range
-55~150
2SC3212
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3212
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 1A;
VCC= 200V
2SC3212
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
3.5
MHz
1.0 μs
2.5 μs
1.0 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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