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NPN Transistor. 2SC3254 Datasheet

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NPN Transistor. 2SC3254 Datasheet
















2SC3254 Transistor. Datasheet pdf. Equivalent













Part

2SC3254

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e ·Good Linearity of hFE ·High Switch ing Speed ·Complement to Type 2SA1290 ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Various inductanc e lamp drivers for electrical equipment ·Inverters, converters ·Power amplif ier ·Switching regulator, .
Manufacture

INCHANGE

Datasheet
Download 2SC3254 Datasheet


INCHANGE 2SC3254

2SC3254; dirver ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB O Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Colle ctor Current-Continuous 7 A ICM Col lector Current-Pulse PC Collector Pow er Dissipation @ TC=25℃ TJ Junction Temperature 10 A 35 W 150 ℃ T stg Storage Temperature.


INCHANGE 2SC3254

Range -55~150 ℃ 2SC3254 isc websi te:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NP N Power Transistor 2SC3254 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS V(BR)CEO Collector-Emitter Break down Voltage IC= 1mA ; RBE= ∞ V(BR)C BO Collector-Base Breakdown Voltage IC = 1mA; IE= 0 V(BR)EBO Emi.


INCHANGE 2SC3254

tter-Base Breakdown Voltage IE= 1mA; IC = 0 VCE(sat) Collector-Emitter Saturat ion Voltage IC= 3.5A; IB= 0.175A ICBO Collector Cutoff Current VCB= 40V; IE = 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1 A ; VCE= 2V fT Current-Gain—Bandwid th Product IC=1A ; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time.





Part

2SC3254

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e ·Good Linearity of hFE ·High Switch ing Speed ·Complement to Type 2SA1290 ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Various inductanc e lamp drivers for electrical equipment ·Inverters, converters ·Power amplif ier ·Switching regulator, .
Manufacture

INCHANGE

Datasheet
Download 2SC3254 Datasheet




 2SC3254
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
·Good Linearity of hFE
·High Switching Speed
·Complement to Type 2SA1290
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Various inductance lamp drivers for electrical equipment
·Inverters, converters
·Power amplifier
·Switching regulator, dirver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
10
A
35
W
150
Tstg
Storage Temperature Range
-55~150
2SC3254
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3254
isc Silicon NPN Power Transistor
2SC3254
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A; IB1= -IB2= 0.15A;
RL=6.67Ω; VCC= 20V
MIN TYP. MAX UNIT
60
V
80
V
5
V
0.4
V
100 μA
100 μA
70
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
hFE Classifications
Q
R
S
70-140 100-200 140-280
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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