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NPN Transistor. 2SC3257 Datasheet

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NPN Transistor. 2SC3257 Datasheet
















2SC3257 Transistor. Datasheet pdf. Equivalent













Part

2SC3257

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC325 7 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 200V(Min) · High Switching Speed ·Minimum Lot-to-L ot variations for robust device perform ance and reliable operation APPLICATION S ·Switching regulator and high voltag e switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2SC3257 Datasheet


INCHANGE 2SC3257

2SC3257; ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Colle ctor Current-Continuous 10 A ICM Co llector Current-Peak 15 A IB Base C urrent-Continuous Collector Power Diss ipation @ Ta=25℃ PC Collector Power D issipation @ TC=25℃ TJ Junction Tem perature 2 A 1.5 W .


INCHANGE 2SC3257

40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www. iscsemi.com 1 isc & iscsemi is registe red trademark isc Silicon NPN Power Tr ansistor 2SC3257 ELECTRICAL CHARACTER ISTICS TC=25℃ unless otherwise specif ied SYMBOL PARAMETER CONDITIONS V(B R)CEO Collector-Emitter Breakdown Volta ge IC= 10mA; IB= 0 V(BR)CBO Collector- Base Breakdown Voltage IC.


INCHANGE 2SC3257

= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A V BE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cut off Current VCB= 200V; IE= 0 IEBO Em itter Cutoff Current VEB= 7V; IC= 0 h FE-1 DC Current Gain IC= 10mA; VCE= 5 V hFE-2 DC Current Gain IC= 5A; VCE= 5V Switching times tr Rise Time ts tg Storage Time .





Part

2SC3257

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC325 7 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 200V(Min) · High Switching Speed ·Minimum Lot-to-L ot variations for robust device perform ance and reliable operation APPLICATION S ·Switching regulator and high voltag e switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2SC3257 Datasheet




 2SC3257
isc Silicon NPN Power Transistor
2SC3257
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2
A
1.5
W
40
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3257
isc Silicon NPN Power Transistor
2SC3257
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.6A; RL= 25Ω;
VCC150V
MIN TYP. MAX UNIT
200
V
250
V
1.0
V
1.5
V
100 μA
1.0 mA
15
20
80
1.0 μs
2.5 μs
1.0 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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