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NPN Transistor. 2SC3264 Datasheet

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NPN Transistor. 2SC3264 Datasheet
















2SC3264 Transistor. Datasheet pdf. Equivalent













Part

2SC3264

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- V(BR)CEO= 230V(Min) ·Good L inearity of hFE ·Complement to Type 2S A1295 ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r audio and general purpose application s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.
Manufacture

INCHANGE

Datasheet
Download 2SC3264 Datasheet


INCHANGE 2SC3264

2SC3264; UNIT VCBO Collector-Base Voltage 23 0 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC C ollector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Ra nge -55~150 ℃ 2SC3264 isc website :www.iscsemi.com 1 isc .


INCHANGE 2SC3264

& iscsemi is registered trademark isc S ilicon NPN Power Transistor 2SC3264 E LECTRICAL CHARACTERISTICS TC=25℃ unle ss otherwise specified SYMBOL PARAMET ER CONDITIONS V(BR)CEO Collector-Emit ter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collect or Cutoff Current VCB= 230V; IE= 0 IE BO Emitter Cutoff C.


INCHANGE 2SC3264

urrent VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 4V COB Output Capa citance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -2A; VCE= 12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A ,RL= 12Ω, IB1= -IB2 = 0.5A,VCC= 60V MIN TYP. MAX UNIT 230 V 2.0 V 100 μA 100 μA 50 140 250 pF 30 MHz 0.3 .





Part

2SC3264

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- V(BR)CEO= 230V(Min) ·Good L inearity of hFE ·Complement to Type 2S A1295 ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r audio and general purpose application s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.
Manufacture

INCHANGE

Datasheet
Download 2SC3264 Datasheet




 2SC3264
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 230V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1295
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
200
W
150
Tstg
Storage Temperature Range
-55~150
2SC3264
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3264
isc Silicon NPN Power Transistor
2SC3264
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -2A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A ,RL= 12Ω,
IB1= -IB2= 0.5A,VCC= 60V
MIN TYP. MAX UNIT
230
V
2.0
V
100 μA
100 μA
50
140
250
pF
30
MHz
0.3
μs
2.4
μs
0.5
μs
hFE Classifications
O
Y
50-100 70-140
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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