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NPN Transistor. 2SC3272 Datasheet

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NPN Transistor. 2SC3272 Datasheet
















2SC3272 Transistor. Datasheet pdf. Equivalent













Part

2SC3272

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC327 2 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Mi n) ·Good Linearity of hFE ·Low Satura tion Voltage ·Minimum Lot-to-Lot varia tions for robust device performance and reliable operation APPLICATIONS ·Desi gned for use in color TV chroma output and video signal amplification. ABSOLU TE MAXIMUM RATINGS(Ta=2.
Manufacture

INCHANGE

Datasheet
Download 2SC3272 Datasheet


INCHANGE 2SC3272

2SC3272; 5℃) SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage 300 V VC EO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC C ollector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collect or Power Dissipation @ Ta=25℃ TJ Ju nction Temperature 0.1 A 5 W 1.2 15 0 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.


INCHANGE 2SC3272

www.iscsemi.com 1 isc & iscsemi is regi stered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S YMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5 0μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100μA; IB= 0 V (BR)EBO Emitter-Base Breakdown Vltage IE= 50μA; IC= 0 VCE(s.


INCHANGE 2SC3272

at) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cut off Current VCB= 200V; IE= 0 IEBO Em itter Cutoff Current VEB= 4V; IC= 0 h FE DC Current Gain IC= 10mA; VCE= 10V fT Current-Gain—Bandwidth Product IE= -10mA; VCE= 30V COB Output Capac itance IE= 0; VCB= 30V, ftest= 1MHz hFE Classifications M N P 39-82 56-120 82-180 2SC3272.





Part

2SC3272

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC327 2 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Mi n) ·Good Linearity of hFE ·Low Satura tion Voltage ·Minimum Lot-to-Lot varia tions for robust device performance and reliable operation APPLICATIONS ·Desi gned for use in color TV chroma output and video signal amplification. ABSOLU TE MAXIMUM RATINGS(Ta=2.
Manufacture

INCHANGE

Datasheet
Download 2SC3272 Datasheet




 2SC3272
isc Silicon NPN Power Transistor
2SC3272
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in color TV chroma output and video
signal amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
0.1
A
5
W
1.2
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3272
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100μA; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 10V
fT
Current-Gain—Bandwidth Product
IE= -10mA; VCE= 30V
COB
Output Capacitance
IE= 0; VCB= 30V, ftest= 1MHz
hFE Classifications
M
N
P
39-82 56-120 82-180
2SC3272
MIN TYP. MAX UNIT
300
V
300
V
5
V
2.0
V
0.5 μA
0.5 μA
39
180
50
MHz
3
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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