DatasheetsPDF.com

NPN Transistor. 2SC3280 Datasheet

DatasheetsPDF.com

NPN Transistor. 2SC3280 Datasheet
















2SC3280 Transistor. Datasheet pdf. Equivalent













Part

2SC3280

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC328 0 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A ·Compleme nt to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Power amplifier applications ·Recomm end for 80W high fidelit.
Manufacture

INCHANGE

Datasheet
Download 2SC3280 Datasheet


INCHANGE 2SC3280

2SC3280; y audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE U NIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 16 0 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Col lector Power Dissipation @ TC=25℃ TJ Junction Temperature.


INCHANGE 2SC3280

1.2 A 120 W 150 ℃ Tstg Storag e Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscs emi is registered trademark isc Silico n NPN Power Transistor ELECTRICAL CHARA CTERISTICS TC=25℃ unless otherwise sp ecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown V oltage IC= 50mA; IB= 0 VCE(sat) Collec tor-Emitter Saturation Vol.


INCHANGE 2SC3280

tage IC= 8A; IB= 0.8A VBE(on) Base-Emit ter On Voltage IC= 6A; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE = 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain I C= 6A; VCE= 5V fT Current-Gain—Band width Product IC= 1A; VCE= 5V COB Ou tput Capacitance IE= 0; VCB= 10V, ftes t= 1MHz 2SC3280 MI.





Part

2SC3280

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC328 0 DESCRIPTION ·Collector-Emitter Brea kdown Voltage- : V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A ·Compleme nt to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation APPLICATIONS ·Power amplifier applications ·Recomm end for 80W high fidelit.
Manufacture

INCHANGE

Datasheet
Download 2SC3280 Datasheet




 2SC3280
isc Silicon NPN Power Transistor
2SC3280
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 8A
·Complement to Type 2SA1301
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base voltage
5
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.2
A
120
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3280
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
2SC3280
MIN TYP. MAX UNIT
160
V
2.0
V
1.5
V
5.0 μA
5.0 μA
55
160
35
30
MHz
220
pF
hFE-1 Classifications
R
O
55-110
80-160
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








Recommended third-party 2SC3280 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)