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NPN Transistor. 2SC3296 Datasheet

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NPN Transistor. 2SC3296 Datasheet
















2SC3296 Transistor. Datasheet pdf. Equivalent













Part

2SC3296

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC329 6 TDESCRIPTIONT ·Collector-Emitter Br eakdown Voltage- : V = B(BR)CEOB 150V(M in) ·Complement to Type 2SA1304 ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation TAPPLICATIONST ·Power amplifier appli cations. ·Vertical output applications . ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SC3296 Datasheet


INCHANGE 2SC3296

2SC3296; E UNIT V CBO B B Collector-Base Volta ge 150 V V CEO B B Collector-Emitt er Voltage 150 V V EBO B B Emitter -Base Voltage 5 V I CB B Collector Current-Continuous 1.5 A I BB B B ase Current-Continuous Collector Power Dissipation @TBaB=25℃ P CB B Col lector Power Dissipation @TBCB=25℃ T JB B Junction Temperature 0.5 A 2 W 20 150 ℃ T stg .


INCHANGE 2SC3296

B B Storage Temperature -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc S ilicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS VBCE(sat)B Collector-Emitter Sa turation Voltage I = CB B 0.5A; I = BB B 50mA VBBE(on)B Base-Emitter On Voltage I = CB B 0.5.


INCHANGE 2SC3296

A; V = CE B B 10V I CBO B B Collec tor Cutoff Current V = CB B B 120V; I = EB B 0 I EBO B B Emitter Cuto ff Current V = EB B B 5V; I = CB B 0 h FE B B DC Current Gain I = CB B 0.5A; V = CE B B 10V f TB B Current-Gain—Bandwidth Product I = C B B 0.5A; V = CE B B 10V C OB B B Output Capacitance I = EB B 0; V = CB B B 10V; f=.





Part

2SC3296

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC329 6 TDESCRIPTIONT ·Collector-Emitter Br eakdown Voltage- : V = B(BR)CEOB 150V(M in) ·Complement to Type 2SA1304 ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation TAPPLICATIONST ·Power amplifier appli cations. ·Vertical output applications . ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SC3296 Datasheet




 2SC3296
isc Silicon NPN Power Transistor
2SC3296
TDESCRIPTIONT
·Collector-Emitter Breakdown Voltage-
: V = B(BR)CEOB 150V(Min)
·Complement to Type 2SA1304
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TAPPLICATIONST
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(TBaB=25)
SYMBOL
PARAMETER
VALUE UNIT
V CBO B
B
Collector-Base Voltage
150
V
V CEO B
B
Collector-Emitter Voltage
150
V
V EBO B
B
Emitter-Base Voltage
5
V
I CB
B
Collector Current-Continuous
1.5
A
I BB
B
Base Current-Continuous
Collector Power Dissipation
@TBaB=25
P CB
B
Collector Power Dissipation
@TBCB=25
T JB
B
Junction Temperature
0.5
A
2
W
20
150
T stg B
B
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3296
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VBCE(sat)B
Collector-Emitter Saturation Voltage
I = CB
B
0.5A;
I = BB
B
50mA
VBBE(on)B Base-Emitter On Voltage
I = CB
B
0.5A;
V = CE B
B
10V
I CBO B
B
Collector Cutoff Current
V = CB B
B
120V;
I = EB
B
0
I EBO B
B
Emitter Cutoff Current
V = EB B
B
5V;
I = CB
B
0
h FE B
B
DC Current Gain
I = CB
B
0.5A;
V = CE B
B
10V
f TB
B
Current-Gain—Bandwidth Product
I = CB
B
0.5A;
V = CE B
B
10V
C OB B
B
Output Capacitance
I = EB
B
0;
V = CB B
B
10V;
f=
1MHz
2SC3296
MIN TYP. MAX UNIT
1.5
V
0.85
V
10
μA
10
μA
40
140
4
MHz
35
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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