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NPN Transistor. 2SC3346 Datasheet

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NPN Transistor. 2SC3346 Datasheet
















2SC3346 Transistor. Datasheet pdf. Equivalent













Part

2SC3346

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge : VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time : tstg= 1.0μs ·C omplement to Type 2SA1329 ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLIC ATIONS ·Designed for high current swit ching applications ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL P.
Manufacture

INCHANGE

Datasheet
Download 2SC3346 Datasheet


INCHANGE 2SC3346

2SC3346; ARAMETER VALUE UNIT VCBO Collector-Bas e Voltage 80 V VCEO Collector-Emitte r Voltage 80 V VEBO Emitter-Base Vol tage 6 V IC Collector Current-Conti nuous 12 A IB Base Current-Continuo us 2 A PC Collector Power Dissipati on@TC=25℃ 40 W TJ Junction Temper ature 150 ℃ Tstg Storage Temperat ure Range -55~150 ℃ 2SC3346 isc we bsite:www.iscsemi.com 1.


INCHANGE 2SC3346

isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC3 346 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL P ARAMETER CONDITIONS V(BR)CEO Collecto r-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Satur ation Voltage IC= 6A; IB= 0.3A VBE(sat ) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO .


INCHANGE 2SC3346

Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6 V; IC= 0 hFE-1 DC Current Gain IC= 1 A ; VCE= 1V hFE-2 DC Current Gain IC = 6A ; VCE= 1V fT Current-Gain—Band width Product IC= 1A ; VCE= 5V COB O utput Capacitance IE= 0 ; VCB= 10V; ft est= 1.0MHz Switching times ton Turn -on Time tstg Storage Time tf Fall Time IB1= -IB2= 0.3.





Part

2SC3346

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Low Collector Saturation Volta ge : VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time : tstg= 1.0μs ·C omplement to Type 2SA1329 ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLIC ATIONS ·Designed for high current swit ching applications ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL P.
Manufacture

INCHANGE

Datasheet
Download 2SC3346 Datasheet




 2SC3346
isc Silicon NPN Power Transistors
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A
·High Speed Switching Time
: tstg= 1.0μs
·Complement to Type 2SA1329
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25
40
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
2SC3346
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3346
isc Silicon NPN Power Transistors
2SC3346
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
hFE-2
DC Current Gain
IC= 6A ; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.3A
RL= 5Ω;PW=20μs Duty1%
MIN TYP. MAX UNIT
80
V
0.2 0.4
V
0.9 1.2
V
10 μA
10 μA
70
240
40
80
MHz
220
pF
0.2
μs
1.0
μs
0.2
μs
hFE-1 Classifications
O
Y
70-140 120-240
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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