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NPN Transistor. 2SC3352 Datasheet

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NPN Transistor. 2SC3352 Datasheet
















2SC3352 Transistor. Datasheet pdf. Equivalent













Part

2SC3352

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC335 2 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) ·Low Collector Saturation Volt age : VCE(sat)= 1.0V(Max.)@ IC= 1A · High Speed Switching ·Minimum Lot-to- Lot variations for robust device perfo rmance and reliable operation APPLICAT IONS ·Designed for high speed switchin g applications. ABSOLUT.
Manufacture

INCHANGE

Datasheet
Download 2SC3352 Datasheet


INCHANGE 2SC3352

2SC3352; E MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 800 V VCEO Collector-Em itter Voltage 500 V VEBO Emitter-Ba se Voltage 8 V IC Collector Current -Continuous 1.5 A ICM Collector Cur rent-Peak 3 A IB Base Current-Conti nuous Collector Power Dissipation @Ta= 25℃ PC Collector Power Dissipation @T C=25℃ Tj Junction Te.


INCHANGE 2SC3352

mperature 0.5 A 2 W 25 150 ℃ Tst g Storage Temperature Range -55~150 isc website:www.iscsemi.com 1 is c & iscsemi is registered trademark is c Silicon NPN Power Transistor 2SC3352 ELECTRICAL CHARACTERISTICS TC=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS MIN TYP. MAX UNIT V CEO(SUS) Collector-Emitter Sustaining V oltage IC= 20mA; IB= 0 50.


INCHANGE 2SC3352

0 V VCE(sat) Collector-Emitter Saturat ion Voltage IC= 1A; IB= 0.2A 1.0 V V BE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Colle ctor Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 0.1 mA hFE-1 DC Curren t Gain IC= 0.1A; VCE= 5V 15 hFE-2 D C Current Gain IC= 1A; VCE= 5V 8 fT Current-Gain—Band.





Part

2SC3352

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC335 2 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) ·Low Collector Saturation Volt age : VCE(sat)= 1.0V(Max.)@ IC= 1A · High Speed Switching ·Minimum Lot-to- Lot variations for robust device perfo rmance and reliable operation APPLICAT IONS ·Designed for high speed switchin g applications. ABSOLUT.
Manufacture

INCHANGE

Datasheet
Download 2SC3352 Datasheet




 2SC3352
isc Silicon NPN Power Transistor
2SC3352
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
0.5
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3352
isc Silicon NPN Power Transistor
2SC3352
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
2.5
MHz
Switching Times; Resistive Load
ton
Turn-on Time
1.0 μs
ts
Storage Time
IC= 1A; IB1= -IB2= 0.2A;
VCC= 200V
3.0 μs
tf
Fall Time
1.0 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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