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NPN Transistor. 2SC3447 Datasheet

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NPN Transistor. 2SC3447 Datasheet
















2SC3447 Transistor. Datasheet pdf. Equivalent













Part

2SC3447

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC344 7 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Mi n) ·High Switching Speed ·Wide Area o f Safe Operation ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for switching regulator and ge neral purpose applications. ABSOLUTE M AXIMUM RATINGS(Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3447 Datasheet


INCHANGE 2SC3447

2SC3447; SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 800 V VCEO Co llector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collect or Current-Continuous 5 A ICM Colle ctor Current-Peak 10 A IB Base Curr ent-Continuous PC Collector Power Dis sipation @ TC=25℃ TJ Junction Tempe rature 2 A 50 W 150 ℃ Tstg St orage Temperature Rang.


INCHANGE 2SC3447

e -55~150 ℃ isc website:www.iscse mi.com 1 isc & iscsemi is registered t rademark isc Silicon NPN Power Transis tor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL P ARAMETER CONDITIONS V(BR)CBO Collecto r-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Em itter-Base Breakdown Volta.


INCHANGE 2SC3447

ge IE= 1m A; IC= 0 VCE(sat) Collector- Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collec tor Cutoff Current VCB= 500V; IE= 0 I EBO Emitter Cutoff Current VEB= 5V; I C= 0 hFE-1 DC Current Gain IC= 0.6A; VCE= 5V hFE-2 DC Current Gain IC= 3 A; VCE= 5V fT Current-Gain—Bandwidt h Product IC= 0.6A;.





Part

2SC3447

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC344 7 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Mi n) ·High Switching Speed ·Wide Area o f Safe Operation ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for switching regulator and ge neral purpose applications. ABSOLUTE M AXIMUM RATINGS(Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3447 Datasheet




 2SC3447
isc Silicon NPN Power Transistor
2SC3447
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2
A
50
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3447
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.6A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.6A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= 0.8A; IB2= -1.6A
RL= 50Ω; VCC= 200V
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
2SC3447
MIN TYP. MAX UNIT
800
V
500
V
7
V
1.0
V
1.5
V
10 μA
10 μA
15
50
8
18
MHz
80
pF
0.5 μs
3.0 μs
0.3 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2SC3447
isc Silicon NPN Power Transistor
2SC3447
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark




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