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NPN Transistor. 2SC3460 Datasheet

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NPN Transistor. 2SC3460 Datasheet
















2SC3460 Transistor. Datasheet pdf. Equivalent













Part

2SC3460

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation AP PLICATIONS ·Designed for switching reg ulator Applications ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collecto.
Manufacture

INCHANGE

Datasheet
Download 2SC3460 Datasheet


INCHANGE 2SC3460

2SC3460; r-Base Voltage 1100 V VCEO Collector -Emitter Voltage 800 V VEBO Emitter -Base Voltage 7 V IC Collector Curr ent-Continuous 6 A ICM Collector Cu rrent-Peak 20 A IB Base Current-Con tinuous PC Collector Power Dissipatio n @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC346 0 isc website:www.iscse.


INCHANGE 2SC3460

mi.com 1 isc & iscsemi is registered tr ademark isc Silicon NPN Power Transist or ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA RAMETER CONDITIONS V(BR)CEO VCEO(SUS) V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Vo ltage Collector-Base Breakdown Voltage IC= 5mA; RBE= ∞ IC= 3A; IB1= -IB2= 0 .6A; L= 1mH; clamped I.


INCHANGE 2SC3460

C= 1mA; IE= 0 V(BR)EBO Emitter-Base Bre akdown Voltage IE= 1mA; IC= 0 VCE(sat ) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 80 0V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.4A; VCE= 5V hFE-2 DC Current G ain IC= 2A; VCE= .





Part

2SC3460

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation AP PLICATIONS ·Designed for switching reg ulator Applications ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collecto.
Manufacture

INCHANGE

Datasheet
Download 2SC3460 Datasheet




 2SC3460
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
100
W
150
Tstg
Storage Temperature Range
-55~150
2SC3460
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3460
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
VCEO(SUS)
V(BR)CBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
IC= 5mA; RBE= ∞
IC= 3A; IB1= -IB2= 0.6A;
L= 1mH; clamped
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.4A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1= 0.8A; IB2= -1.6A
RL= 100Ω; VCC=400V
2SC3460
MIN TYP. MAX UNIT
800
V
800
V
1100
V
7
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
120
pF
15
MHz
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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