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NPN Transistor. 2SC3461 Datasheet

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NPN Transistor. 2SC3461 Datasheet
















2SC3461 Transistor. Datasheet pdf. Equivalent













Part

2SC3461

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Op eration ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Switching regulator and high voltage switching a pplications. ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL PARAME.
Manufacture

INCHANGE

Datasheet
Download 2SC3461 Datasheet


INCHANGE 2SC3461

2SC3461; TER VALUE UNIT VCBO Collector-Base V oltage 1100 V VCEO Collector-Emitte r Voltage 800 V VEBO Emitter-Base v oltage 7 V IC Collector Current-Con tinuous 8 A ICM Collector Current-P eak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 4 A 140 W 150 ℃ Tstg Storage Tempera ture Range -55~150 ℃.


INCHANGE 2SC3461

2SC3461 isc website:www.iscsemi.com 1 isc & iscsemi is registered tradema rk isc Silicon NPN Power Transistor 2 SC3461 ELECTRICAL CHARACTERISTICS TC=2 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitt er-Base Breakdown Voltage IE= 1mA ; IC = 0 V(BR)CEO Collector-Emitter Breakdo wn Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdow.


INCHANGE 2SC3461

n Voltage IC= 1mA ; IE= 0 VCE(sat) Col lector-Emitter Saturation Voltage IC= 4 A; IB= 0.8A VBE(sat) Base-Emitter Satu ration Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VE B= 5V; IC= 0 hFE-1 DC Current Gain I C= 0.6A ; VCE= 5V hFE-2 DC Current Ga in IC= 3A ; VCE= 5V COB Output Capac itance VCB= 10V;f.





Part

2SC3461

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Collector-Emitter Breakdow n Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Op eration ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Switching regulator and high voltage switching a pplications. ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL PARAME.
Manufacture

INCHANGE

Datasheet
Download 2SC3461 Datasheet




 2SC3461
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulator and high voltage switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
140
W
150
Tstg
Storage Temperature Range
-55~150
2SC3461
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3461
isc Silicon NPN Power Transistor
2SC3461
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.6A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.6A ; VCE= 10V
Switching times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 6A; IB1= 1.2A, IB2= -2.4A;
RL= 66.7Ω; VCC= 400V
PW=20μs; Duty Cycle1%
MIN TYP. MAX UNIT
7
V
800
V
1100
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
155
pF
15
MHz
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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