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NPN Transistor. 2SC3465 Datasheet

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NPN Transistor. 2SC3465 Datasheet
















2SC3465 Transistor. Datasheet pdf. Equivalent













Part

2SC3465

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation A PPLICATIONS ·Designed for switching re gulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCBO Collect.
Manufacture

INCHANGE

Datasheet
Download 2SC3465 Datasheet


INCHANGE 2SC3465

2SC3465; or-Base Voltage 1100 V VCEO Collecto r-Emitter Voltage 800 V VEBO Emitte r-Base Voltage 7 V IC Collector Cur rent-Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current-C ontinuous PC Collector Power Dissipat ion @ TC=25℃ TJ Junction Temperatur e 6 A 160 W 150 ℃ Tstg Storag e Temperature Range -55~150 ℃ 2SC3 465 isc website:www.isc.


INCHANGE 2SC3465

semi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi stor 2SC3465 ELECTRICAL CHARACTERISTI CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CE O VCEO(SUS) V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Emitter Su staining Voltage Collector-Base Breakdo wn Voltage IC= 5mA; RBE= ∞ IC= 6A; I B1= -IB2= 1.2A; L= 1mH.


INCHANGE 2SC3465

; clamped IC= 1mA; IE= 0 V(BR)EBO Emitt er-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) VBE(sat) Collector-Emitte r Saturation Voltage Base-Emitter Satur ation Voltage IC= 6A; IB= 1.2A IC= 6A; IB= 1.2A ICBO Collector Cutoff Curre nt VCB= 800V; IE=0 IEBO Emitter Cuto ff Current VEB= 5V; IC=0 hFE-1 DC Cu rrent Gain IC= 0.8A; VCE= 5V hFE-2 D C Current Gain IC.





Part

2SC3465

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation A PPLICATIONS ·Designed for switching re gulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCBO Collect.
Manufacture

INCHANGE

Datasheet
Download 2SC3465 Datasheet




 2SC3465
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
6
A
160
W
150
Tstg
Storage Temperature Range
-55~150
2SC3465
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3465
isc Silicon NPN Power Transistor
2SC3465
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
VCEO(SUS)
V(BR)CBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
IC= 5mA; RBE= ∞
IC= 6A; IB1= -IB2= 1.2A;
L= 1mH; clamped
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.8A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 8A, IB1= 1.6A; IB2= -3.2A
RL= 50Ω; VCC=400V
MIN
800
800
1100
7
10
8
TYP.
240
15
MAX
2.0
1.5
10
10
40
UNIT
V
V
V
V
V
V
μA
μA
pF
MHz
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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